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MBR60040CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 40V 300A 2TOWER. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor MBR60040CT is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 40 V and an average forward current of 600 A per package. It features a Twin Tower package design with a maximum forward voltage of 0.75 V at 300 A and a thermal resistance of 0.28 °C/W per leg. The device supports a peak forward surge current of 4000 A and operates within a junction temperature range of -55 °C to 150 °C.
Verify the specific suffix (CT or CTR) to confirm terminal lead orientation, as reversed leads affect board layout compatibility. Confirm RoHS compliance status and check for recent discontinuation notices from Navitas Semiconductor, which acquired GeneSiC. Ensure thermal interface material selection matches the specified junction-to-case thermal resistance requirements.
Select this component when a 40 V rating is required alongside high current capacity. Compare thermal resistance values against system heat sink capabilities. Verify that the Twin Tower package dimensions fit the mechanical constraints. Consider the non-ESD sensitive nature during handling procedures.
This part belongs to the MBR600 series of silicon Schottky diode modules from GeneSiC Semiconductor. The series includes variants ranging from 20 V to 40 V reverse voltage ratings. These modules are designed for high-efficiency power conversion applications requiring low forward voltage and high surge current tolerance.
Direct replacements include other MBR600 series variants such as MBR60035CT or MBR60030CT if lower voltage ratings are acceptable. Verify pinout compatibility before substitution.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.