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MBR60040CTL is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 40V 300A 2TOWER. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for MBR60040CTL
- Description：DIODE MOD SCHOTT 40V 300A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：40 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：600 mV @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5 mA @ 40 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
Diode Arrays datasheet and documents for MBR60040CTL
Diode Arrays Overview
The MBR60040CTL is a silicon Schottky rectifier diode array manufactured by GeneSiC Semiconductor. It features a Twin Tower package with a repetitive peak reverse voltage of 40V and an average forward current rating of 300A. The maximum forward voltage is specified as 600mV at 300A, with a non-repetitive peak surge current capability of 3000A. The device operates within a junction temperature range of -55°C to +175°C.
Diode Arrays Feature Summary
- Utilizes a Twin Tower package configuration for efficient thermal management
- Features high surge current capability for robust power handling
- Constructed using silicon technology for reliable rectification
Diode Arrays Applications
- Power supply circuits
- DC-DC converters
- Inverter applications
Diode Arrays Procurement Notes
Verify the specific suffix CTL against official GeneSiC documentation to confirm lead configuration and exact electrical ratings. Ensure compatibility with existing PCB footprints and thermal design requirements before procurement. Confirm availability status through authorized distributors as lifecycle status may vary.
Diode Arrays Selection Notes
Select this component for low-voltage, high-current applications requiring fast switching characteristics. Compare the 300A current rating and 40V voltage limit against system demands. Evaluate the Twin Tower package suitability for mounting constraints and heat dissipation needs in the target design.
Diode Arrays Part Context
This part belongs to the MBR600 series of Schottky diodes from GeneSiC Semiconductor. The series is designed for high-efficiency power conversion applications. The Twin Tower package provides a compact solution for high-current density requirements while maintaining low forward voltage drop characteristics.
Diode Arrays Replacement Considerations
Consult official GeneSiC cross-reference documents for verified substitutes. Generic equivalents may not match the specific Twin Tower package dimensions or exact electrical parameters. Verify pinout compatibility if replacing in existing designs.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.
