Diode Arrays MBR60045CT product image

MBR60045CT

$91.69
  • Description:DIODE MOD SCHOTT 45V 300A 2TOWER
  • Series:-

SKU:012a0cbdfa89 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MBR60045CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 45V 300A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR60045CT

  • Description:DIODE MOD SCHOTT 45V 300A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:750 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR60045CT

MBR60045CT

Diode Arrays Overview

The MBR60045CT is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package configuration with an average forward current rating of 600 A per package and a repetitive peak reverse voltage of 45 V. The device exhibits a maximum forward voltage of 0.75 V per leg at Tj = 25 °C and supports a peak forward surge current of 4000 A per leg. Thermal resistance from junction to case is 0.28 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability for robust transient handling
  • Twin Tower package design for efficient mounting
  • Non-ESD sensitive construction

Diode Arrays Applications

  • High-power rectification circuits
  • Industrial power conversion systems
  • DC-DC converter modules

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation, as variations may exist. Confirm thermal interface requirements and mounting torque specifications prior to integration. Ensure compatibility with existing cooling infrastructure given the high current ratings. Check for RoHS compliance status if required by local regulations. Validate lead times and availability directly with authorized distributors or the manufacturer.

Diode Arrays Selection Notes

Select this component for applications requiring high current density and low forward voltage drop in a compact form factor. The Twin Tower package facilitates direct board or chassis mounting. Consider the thermal resistance value when designing heat dissipation solutions. Ensure the operating temperature range aligns with the environmental conditions of the target application.

Diode Arrays Part Context

This module belongs to the MBR600 series of silicon power Schottky diodes, which includes variants with reverse voltages ranging from 45 V to 100 V. The series is characterized by high average forward current capabilities and rugged surge performance. It is designed for demanding power electronics environments where efficiency and reliability are critical.

Diode Arrays Replacement Considerations

Cross-reference with other MBR600 series parts such as MBR60060CT for higher voltage requirements. Verify pinout compatibility if substituting within the same package family. Ensure equivalent thermal and electrical ratings are met by any alternative component.

MBR60045CTMBR60045CT
$91.69
Buy Now