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MBR60100CT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 100V 30A TO2203. Review the specifications below when checking this part for your BOM.
The MBR60100CT-E3/45 is a dual common-cathode high voltage Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes silicon technology and features a TO-220AB through-hole package with three terminals. The device supports a maximum repetitive peak reverse voltage of 100 V and provides a total maximum average forward rectified current of 60 A, rated at 30 A per diode. Key electrical parameters include a peak forward surge current of 350 A per diode and a typical thermal resistance of 0.5 °C/W. The component operates within a junction temperature range of -65 to +175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance requirements and packaging details. Confirm that the TO-220AB package dimensions match the mechanical constraints of the target design. Ensure that thermal management strategies account for the specified thermal resistance values under actual operating conditions rather than idealized test environments.
Select this component when designing circuits requiring high surge current handling and low forward voltage characteristics at 100 V blocking levels. The dual common-cathode configuration simplifies layout for full-wave or bridge rectification topologies. Evaluate the thermal performance based on the derating curves provided in the datasheet to ensure reliable operation across the specified temperature range.
This part belongs to the MBR60100CT series of high voltage Schottky rectifiers from Vishay. It is distinct from lower voltage variants and single-diode packages within the broader product line. The E3 suffix indicates consumer grade compliance with specific environmental directives, while the /45 suffix denotes tube delivery packaging.
MBR60100CT-E3/4W
The maximum non-repetitive peak forward surge current is 350 A per diode, measured as an 8.3 ms single half sine-wave superimposed on rated load.
Yes, the component is compliant with RoHS Directive 2002/95/EC and WEEE 2002/96/EC, and products identified as compliant also conform to Directive 2011/65/EU.
At a forward current of 30 A and a junction temperature of 125 °C, the typical instantaneous forward voltage is 0.64 V.
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