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MBRB10100CT-M3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 90V 10A TO263AB. Review the specifications below when checking this part for your BOM.
The MBRB10100CT-M3/8W is a high-voltage TMBS rectifier manufactured by Vishay General Semiconductor. It utilizes Trench MOS Schottky technology to achieve lower power losses and high efficiency. The device features a low forward voltage drop, high forward surge capability, and supports high-frequency operation. It meets MSL level 1 per J-ST D-020 with an LF maximum peak of 245 °C. The component is housed in a D2PAK (TO-263AB) package.
Verify the specific ordering suffix against official documentation to confirm packaging format and compliance status. Ensure that the procurement matches the exact part number required for the intended thermal and electrical specifications. Cross-reference datasheet revision dates to ensure current material categorization and mechanical data are applied correctly during sourcing.
Select this component based on its single circuit configuration and D2PAK package suitability for surface mount applications. Consider the operating junction temperature range and thermal resistance characteristics when designing heat dissipation strategies. Validate that the reverse voltage and average forward current ratings align with the specific requirements of the target circuit design.
This part belongs to the MBRB10100-M3 series from Vishay General Semiconductor - Diodes Division. It is designed as a high-voltage rectifier utilizing advanced Trench MOS Barrier Schottky technology. The product line emphasizes efficiency and reliability in power conversion applications, offering robust performance under varying thermal conditions.
MBRB10100-M3/4W
It utilizes Trench MOS Schottky technology.
Yes, it meets MSL level 1 per J-ST D-020.
The LF maximum peak temperature is 245 °C.
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