Diode Arrays MBRB10100CT-M3/8W product image

MBRB10100CT-M3/8W

$0.48
  • Description:DIODE ARR SCHOTT 90V 10A TO263AB
  • Series:-

SKU:d67de54fdcfa Category: Brand:

  
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MBRB10100CT-M3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 90V 10A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRB10100CT-M3/8W

  • Description:DIODE ARR SCHOTT 90V 10A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):90 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:800 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 100 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRB10100CT-M3/8W

MBRB10100CT-M3/8W

Diode Arrays Overview

The MBRB10100CT-M3/8W is a high-voltage TMBS rectifier manufactured by Vishay General Semiconductor. It utilizes Trench MOS Schottky technology to achieve lower power losses and high efficiency. The device features a low forward voltage drop, high forward surge capability, and supports high-frequency operation. It meets MSL level 1 per J-ST D-020 with an LF maximum peak of 245 °C. The component is housed in a D2PAK (TO-263AB) package.

Diode Arrays Feature Summary

  • Trench MOS Schottky technology for reduced power loss
  • Low forward voltage drop for high efficiency
  • High forward surge capability
  • High frequency operation

Diode Arrays Applications

  • High frequency rectifier of switching mode power supplies
  • Freewheeling diodes
  • DC/DC converters
  • Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging format and compliance status. Ensure that the procurement matches the exact part number required for the intended thermal and electrical specifications. Cross-reference datasheet revision dates to ensure current material categorization and mechanical data are applied correctly during sourcing.

Diode Arrays Selection Notes

Select this component based on its single circuit configuration and D2PAK package suitability for surface mount applications. Consider the operating junction temperature range and thermal resistance characteristics when designing heat dissipation strategies. Validate that the reverse voltage and average forward current ratings align with the specific requirements of the target circuit design.

Diode Arrays Part Context

This part belongs to the MBRB10100-M3 series from Vishay General Semiconductor - Diodes Division. It is designed as a high-voltage rectifier utilizing advanced Trench MOS Barrier Schottky technology. The product line emphasizes efficiency and reliability in power conversion applications, offering robust performance under varying thermal conditions.

Diode Arrays Replacement Considerations

MBRB10100-M3/4W

Diode Arrays FAQ

What technology does the MBRB10100CT-M3/8W utilize?

It utilizes Trench MOS Schottky technology.

Does the MBRB10100CT-M3/8W meet MSL level 1?

Yes, it meets MSL level 1 per J-ST D-020.

What is the maximum LF peak temperature for the MBRB10100CT-M3/8W?

The LF maximum peak temperature is 245 °C.

MBRB10100CT-M3/8WMBRB10100CT-M3/8W
$0.48
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