Diode Arrays MBRB10H100CT-E3/45 product image

MBRB10H100CT-E3/45

$0.65
  • Description:DIODE ARR SCHOTT 100V 5A TO263AB
  • Series:-

SKU:7496a6b89661 Category: Brand:

  
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MBRB10H100CT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 100V 5A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRB10H100CT-E3/45

  • Description:DIODE ARR SCHOTT 100V 5A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):5A
  • Voltage - Forward (Vf) (Max) @ If:850 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3.5 µA @ 100 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRB10H100CT-E3/45

MBRB10H100CT-E3/45

Diode Arrays Overview

The MBRB10H100CT-E3/45 is a dual common cathode high voltage Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes high barrier technology for improved high-temperature performance and is housed in a D2PAK (TO-263AB) surface-mount package. The device features a maximum repetitive peak reverse voltage of 100 V and a total maximum average forward rectified current of 10 A, with each diode rated at 5.0 A. It supports a peak forward surge current of 150 A per diode and operates within a junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

  • High barrier technology designed for enhanced high-temperature operational stability
  • Guardring structure integrated to provide overvoltage protection
  • Low forward voltage drop combined with low leakage current for high efficiency
  • Capable of high frequency operation and high forward surge capability

Diode Arrays Applications

  • High frequency rectification in switching mode power supplies
  • Freewheeling diodes in DC/DC converter circuits
  • Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The E3 suffix indicates RoHS compliance and commercial grade material categorization. Confirm that the D2PAK (TO-263AB) package variant matches the required thermal and mechanical constraints for the target design.

Diode Arrays Selection Notes

Select this component when a surface-mount dual common cathode configuration is required for high-voltage rectification. Ensure the application demands a 100 V rating and can accommodate the specified thermal resistance characteristics of the D2PAK package. Validate that the operating environment remains within the stated junction temperature limits.

Diode Arrays Part Context

This part belongs to the MBR10HxxCT series from Vishay General Semiconductor. It shares core electrical specifications with through-hole variants like the MBR10H100CT but differs in physical packaging. The D2PAK form factor allows for direct surface mounting on printed circuit boards while maintaining the high current handling capabilities of the broader family.

Diode Arrays Replacement Considerations

MBR10H100CT-M3/I

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage for this device?

The maximum repetitive peak reverse voltage (VRRM) is 100 V.

How is the internal circuit configured?

The device contains two independent diodes arranged in a common cathode configuration.

Does the component meet specific moisture sensitivity levels?

Yes, it meets Moisture Sensitivity Level (MSL) 1 as defined by J-STD-020 standards.

MBRB10H100CT-E3/45MBRB10H100CT-E3/45
$0.65
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