Diode Arrays MBRB15H45CTHE3_B/I product image

MBRB15H45CTHE3_B/I

$0.55
  • Description:DIODE ARR SCHOT 45V 7.5A TO263AB
  • Series:-

SKU:caec3dc9ff5d Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MBRB15H45CTHE3_B/I is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 45V 7.5A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRB15H45CTHE3_B/I

  • Description:DIODE ARR SCHOT 45V 7.5A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):7.5A
  • Voltage - Forward (Vf) (Max) @ If:630 mV @ 7.5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:50 µA @ 45 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBRB15H45CTHE3_B/I

MBRB15H45CTHE3_B/I

Diode Arrays Overview

The MBRB15H45CTHE3_B/I is a dual common cathode Schottky rectifier utilizing high barrier technology for improved high-temperature performance. It features a D2PAK (TO-263AB) package with a maximum repetitive peak reverse voltage of 45 V and a total maximum average forward rectified current of 15 A, rated at 7.5 A per diode. The device exhibits a low forward voltage drop of 0.55 V typical at 15 A and 25 °C, alongside a maximum reverse current of 50 μA at 25 °C. Operating junction temperature ranges from -65 °C to +175 °C.

Diode Arrays Feature Summary

  • High barrier technology designed for enhanced high-temperature operation
  • Guardring structure provides overvoltage protection
  • Low forward voltage drop ensures high efficiency and reduced power loss
  • Qualified for automotive applications under AEC-Q101 standards

Diode Arrays Applications

  • Low voltage, high frequency rectification in switching mode power supplies
  • Freewheeling diodes in DC/DC converters
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm compliance with RoHS directives, halogen-free status, and AEC-Q101 qualification requirements. Ensure the component matches the D2PAK (TO-263AB) package outline dimensions and terminal plating specifications before integration into production designs.

Diode Arrays Selection Notes

Select this component for applications requiring robust high-temperature stability and low conduction losses. The dual common cathode configuration allows for efficient use of space in compact designs. Verify thermal management capabilities, as the maximum thermal resistance per diode is 3.0 °C/W, necessitating appropriate heatsinking or PCB layout strategies for sustained high-current operations.

Diode Arrays Part Context

This part belongs to the MBRB15HxxCT series of dual Schottky barrier rectifiers manufactured by Vishay General Semiconductor. The series utilizes silicon technology optimized for high-frequency switching applications. The 'HM3' designation indicates RoHS compliance and halogen-free construction, while the base model number defines the electrical ratings and package type.

Diode Arrays Replacement Considerations

Vishay MBRB15H45CTHM3/I

Diode Arrays FAQ

What is the maximum operating junction temperature for this device?

The maximum operating junction temperature is 175 °C.

Does this component meet automotive reliability standards?

Yes, the device is AEC-Q101 qualified.

What is the non-repetitive peak forward surge current rating?

The peak forward surge current is 150 A per diode for an 8.3 ms single half sine-wave superimposed on rated load.

MBRB15H45CTHE3_B/IMBRB15H45CTHE3_B/I
$0.55
Buy Now