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MBRB15H45CTHE3_B/I is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 45V 7.5A TO263AB. Review the specifications below when checking this part for your BOM.
The MBRB15H45CTHE3_B/I is a dual common cathode Schottky rectifier utilizing high barrier technology for improved high-temperature performance. It features a D2PAK (TO-263AB) package with a maximum repetitive peak reverse voltage of 45 V and a total maximum average forward rectified current of 15 A, rated at 7.5 A per diode. The device exhibits a low forward voltage drop of 0.55 V typical at 15 A and 25 °C, alongside a maximum reverse current of 50 μA at 25 °C. Operating junction temperature ranges from -65 °C to +175 °C.
Verify the specific ordering suffix against official Vishay documentation to confirm compliance with RoHS directives, halogen-free status, and AEC-Q101 qualification requirements. Ensure the component matches the D2PAK (TO-263AB) package outline dimensions and terminal plating specifications before integration into production designs.
Select this component for applications requiring robust high-temperature stability and low conduction losses. The dual common cathode configuration allows for efficient use of space in compact designs. Verify thermal management capabilities, as the maximum thermal resistance per diode is 3.0 °C/W, necessitating appropriate heatsinking or PCB layout strategies for sustained high-current operations.
This part belongs to the MBRB15HxxCT series of dual Schottky barrier rectifiers manufactured by Vishay General Semiconductor. The series utilizes silicon technology optimized for high-frequency switching applications. The 'HM3' designation indicates RoHS compliance and halogen-free construction, while the base model number defines the electrical ratings and package type.
Vishay MBRB15H45CTHM3/I
The maximum operating junction temperature is 175 °C.
Yes, the device is AEC-Q101 qualified.
The peak forward surge current is 150 A per diode for an 8.3 ms single half sine-wave superimposed on rated load.
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