MBRB2090CT-E3/4W

Diode Arrays Overview

The MBRB2090CT-E3/4W is a dual common-cathode high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a TO-263AB (D2PAK) surface-mount package with a maximum repetitive peak reverse voltage of 90 V and a total maximum average forward rectified current of 20 A (10 A per diode). The device exhibits a low forward voltage drop, reaching a maximum of 0.80 V at 10 A and 25 °C case temperature. It supports a peak forward surge current of 150 A and operates within a junction temperature range of -65 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for lower power losses and high efficiency
• Provides low forward voltage drop and high forward surge capability
• Designed for high frequency operation in switching applications

Diode Arrays Applications

• High frequency rectifier of switching mode power supplies
• Freewheeling diodes
• DC/DC converters
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific suffix 'E3' confirms RoHS compliance and lead-free terminals. Confirm the '/4W' designation corresponds to the tube packaging format containing 50 units per tube. Ensure the TO-263AB package type matches the required PCB footprint and thermal management strategy for the target application environment.

Diode Arrays Selection Notes

Select this component when a surface-mount solution is required for high-frequency rectification or freewheeling duties. The TMBS technology offers superior performance compared to standard silicon rectifiers. Consider the thermal resistance characteristics and derating curves to ensure reliable operation under expected load conditions and ambient temperatures.

Diode Arrays Part Context

This part belongs to the MBR20xxxCT-E3 family of dual common-cathode Schottky rectifiers. It shares the same electrical specifications as the MBR2090CT but utilizes a different package configuration. The E3 suffix indicates compliance with RoHS directives and JESD 201 class 1A whisker testing standards.

Diode Arrays Replacement Considerations

Direct replacements include the MBR2090CT-M3/8W for tape-and-reel packaging or the MBR2090CT-E3/4W from alternative distributors. Verify that substitute components maintain the same 90 V rating, 10 A per diode current capacity, and TO-263AB mechanical dimensions.

Diode Arrays FAQ

What is the maximum instantaneous forward voltage drop?

The maximum instantaneous forward voltage is 0.80 V at an forward current of 10 A and a case temperature of 25 °C.

Does the device meet moisture sensitivity level requirements?

Yes, it meets MSL level 1 per J-STD-020, with a LF maximum peak reflow temperature of 245 °C for the TO-263AB package.

What is the non-repetitive avalanche energy rating?

The non-repetitive avalanche energy is rated at 130 mJ per diode at a junction temperature of 25 °C with an inductance of 60 mH.