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MBRB2090CT-M3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 90V 10A TO263AB. Review the specifications below when checking this part for your BOM.
The MBRB2090CT-M3/8W is a dual common-cathode high-voltage Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes Trench MOS Schottky technology to achieve lower power losses and high efficiency. The device features a maximum repetitive peak reverse voltage of 90 V and a total maximum average forward rectified current of 20 A, distributed as 10 A per diode. It operates within a junction temperature range of -65 °C to +150 °C and offers a peak forward surge current capability of 150 A.
Verify the specific ordering suffix /8W corresponds to the tape and reel packaging format containing 800 units per reel. Confirm that the base part number indicates compliance with RoHS directives and halogen-free material requirements. Ensure the component meets JESD 201 class 1A whisker test standards before final integration into the design.
Select this component when a dual common-cathode configuration is required for space-constrained designs. The D2PAK (TO-263AB) package provides effective thermal management through its exposed copper tab. Consider the 90 V reverse voltage rating and 10 A per diode current capacity against the specific circuit load requirements.
This component belongs to the MBRB20 series of high-power Schottky rectifiers from Vishay. The series includes variants with different reverse voltage ratings, such as the MBRB20100CT. These devices are designed for surface-mount assembly, offering an alternative to traditional through-hole rectifiers while maintaining robust electrical performance.
MBRB20100CT-M3/8W
The maximum instantaneous forward voltage is 0.80 V at 10 A and 25 °C case temperature.
Yes, it meets MSL level 1 per J-STD-020, with a maximum peak reflow temperature of 245 °C.
The typical thermal resistance from junction to case is 2.0 °C/W per diode.
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