Diode Arrays MBRB25H45CTHE3/81 product image

MBRB25H45CTHE3/81

  • Description:DIODE ARR SCHOTT 45V 15A TO263AB
  • Series:-

SKU:56790256c2f2 Category: Brand:

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MBRB25H45CTHE3/81 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 45V 15A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRB25H45CTHE3/81

  • Description:DIODE ARR SCHOTT 45V 15A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:640 mV @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 45 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBRB25H45CTHE3/81

MBRB25H45CTHE3/81

Diode Arrays Overview

The MBRB25H45CTHE3/81 is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes high barrier technology to deliver improved performance at elevated temperatures. The device features a D2PAK (TO-263AB) surface-mount package and is designed for low voltage, high frequency applications. Key electrical ratings include a maximum repetitive peak reverse voltage of 45 V and a total average forward rectified current of 30 A (15 A per diode). It supports an operating junction temperature range from -65 °C to +175 °C.

Diode Arrays Feature Summary

  • High barrier technology ensures enhanced thermal stability and reliability under demanding conditions.
  • Guardring structure provides robust protection against overvoltage events.
  • Low forward voltage drop contributes to reduced power losses and higher system efficiency.
  • AEC-Q101 qualified for automotive electronics applications.

Diode Arrays Applications

  • Switching mode power supplies
  • Free-wheeling diodes in DC/DC converters
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix to confirm the delivery mode and packaging format. The base part number indicates RoHS compliance and halogen-free construction. Confirm that the required quantity aligns with standard reel sizes. Ensure the component meets the necessary environmental standards for the intended deployment environment before finalizing procurement.

Diode Arrays Selection Notes

Select this component when a dual common cathode configuration is required for synchronous rectification or polarity protection. The D2PAK package offers a balance between current handling capability and board space constraints. Consider the thermal resistance characteristics and derating curves to ensure adequate heat dissipation for the specific application load.

Diode Arrays Part Context

This device belongs to the MBRB25HxxCT series, which includes variants with different reverse voltage ratings such as 35 V and 60 V. All members of this family share the same physical footprint and thermal characteristics, allowing for design flexibility while maintaining consistent mechanical integration across different voltage requirements.

Diode Arrays Replacement Considerations

MBRB25H35CTHM3/I

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 150 A per diode for an 8.3 ms single half sine-wave superimposed on rated load.

Is the component suitable for automotive applications?

Yes, the device is AEC-Q101 qualified, making it suitable for use in automotive electronics applications.

What is the thermal resistance from junction to case?

The thermal resistance from junction to case per diode is 1.5 °C/W.

MBRB25H45CTHE3/81MBRB25H45CTHE3/81

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