MBRB25H50CT-E3/45

Diode Arrays Overview

The MBRB25H50CT-E3/45 is a dual common cathode Schottky rectifier utilizing high barrier technology for improved high-temperature performance. It features a TO-263AB (D2PAK) surface-mount package with a maximum repetitive peak reverse voltage of 50 V and a total average forward rectified current of 30 A (15 A per diode). The device exhibits a low forward voltage drop, reaching a maximum of 0.72 V at 30 A and 125 °C, alongside a maximum reverse leakage current of 20 mA at 125 °C. It supports an operating junction temperature range from -65 °C to +175 °C.

Diode Arrays Feature Summary

• High barrier technology designed for enhanced high-temperature operation
• Guardring structure provides protection against overvoltage conditions
• Low forward voltage drop contributes to lower power losses and higher efficiency
• AEC-Q101 qualified for automotive reliability standards

Diode Arrays Applications

• Low voltage, high frequency rectification in switching mode power supplies
• Freewheeling diodes in DC/DC converter circuits
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific suffix configuration when sourcing replacements. The E3 suffix indicates RoHS compliance and commercial grade status, while HE3 denotes AEC-Q101 qualification. Confirm that the TO-263AB package matches the target footprint, as other variants like MBR25HxxCT utilize different mechanical housings despite sharing electrical characteristics.

Diode Arrays Selection Notes

Select this component for designs requiring robust thermal performance up to 175 °C junction temperature. The high barrier technology ensures stable leakage characteristics compared to standard silicon rectifiers. Ensure adequate heatsinking or copper area on the PCB to manage thermal resistance, particularly given the 15 A per diode rating and the resulting heat dissipation requirements during continuous conduction.

Diode Arrays Part Context

This part belongs to the Vishay MBR25HxxCT family of dual common cathode Schottky rectifiers. The series includes variations with reverse voltages ranging from 35 V to 60 V. The MBRB variant specifically designates the TO-263AB surface-mount package, distinguishing it from the through-hole MBR25HxxCT (TO-220AB) and insulated MBRF25HxxCT (ITO-220AB) versions.

Diode Arrays Replacement Considerations

MBR25H50CTHE3/45

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 150 A per diode for an 8.3 ms single half sine-wave superimposed on rated load.

Does the MBRB25H50CT-E3/45 meet automotive standards?

No, the E3 suffix indicates commercial grade. The HE3 suffix (e.g., MBRB25H50CTHE3/45) indicates AEC-Q101 qualification for automotive applications.

What is the isolation voltage for this package?

Isolation voltage specifications are provided only for the ITO-220AB package. The TO-263AB package does not list an isolation voltage rating in the datasheet.