Diode Arrays MBRB25H60CT-E3/81 product image

MBRB25H60CT-E3/81

  • Description:DIODE ARR SCHOTT 60V 15A TO263AB
  • Series:-

SKU:db6d000a27b5 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MBRB25H60CT-E3/81 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 60V 15A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRB25H60CT-E3/81

  • Description:DIODE ARR SCHOTT 60V 15A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:700 mV @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 60 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRB25H60CT-E3/81

MBRB25H60CT-E3/81

Diode Arrays Overview

The MBRB25H60CT-E3/81 is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes high barrier technology to deliver improved performance at elevated temperatures. The device features a TO-263AB (D2PAK) surface-mount package and is rated for a maximum repetitive peak reverse voltage of 60 V with a total average forward rectified current of 30 A (15 A per diode). Key electrical characteristics include a low forward voltage drop, minimal leakage current, and high surge capability, making it suitable for demanding power conversion applications.

Diode Arrays Feature Summary

  • High barrier technology ensures enhanced thermal stability and reliability under high-temperature operating conditions.
  • Guardring structure provides robust overvoltage protection capabilities.
  • Low forward voltage drop minimizes conduction losses and improves overall system efficiency.
  • AEC-Q101 qualified for automotive electronics compliance.

Diode Arrays Applications

  • Switching mode power supplies
  • DC/DC converters
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the correct packaging configuration and RoHS compliance status. Ensure that the procurement specifications align with the required thermal management and mounting torque limits defined in the datasheet. Confirm component authenticity through authorized channels.

Diode Arrays Selection Notes

Select this component for designs requiring high-frequency operation and low power loss in low-voltage environments. Evaluate the thermal resistance from junction to case to ensure adequate heat dissipation within the specified operating temperature range. Consider the physical dimensions of the TO-263AB package during PCB layout planning.

Diode Arrays Part Context

This part belongs to the MBRB25HxxCT series of dual common cathode Schottky rectifiers. The series encompasses various voltage ratings ranging from 35 V to 60 V, all sharing similar current handling capabilities and utilizing high barrier silicon technology for superior performance compared to standard Schottky devices.

Diode Arrays Replacement Considerations

MBRB25H60CTHE3/81

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current rating?

The maximum non-repetitive peak forward surge current is 150 A for an 8.3 ms single half sine-wave superimposed on rated load.

Does the component meet automotive qualification standards?

Yes, the device is AEC-Q101 qualified, ensuring suitability for automotive electronic applications.

What is the maximum junction temperature rating?

The maximum operating junction temperature is 175 °C.

MBRB25H60CT-E3/81MBRB25H60CT-E3/81

Click on the inquiry