Diode Arrays MBRB3030CTT4G product image

MBRB3030CTT4G

$1.59
  • Description:DIODE ARRAY SCHOTT 30V 15A D2PAK
  • Series:SWITCHMODE™

SKU:96d747ed164c Category: Brand:

  
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MBRB3030CTT4G is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY SCHOTT 30V 15A D2PAK. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRB3030CTT4G

  • Description:DIODE ARRAY SCHOTT 30V 15A D2PAK
  • Series:SWITCHMODE™
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:540 mV @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:600 µA @ 30 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRB3030CTT4G

MBRB3030CTT4G

Diode Arrays Overview

The MBRB3030CTT4G is a Schottky barrier rectifier manufactured by onsemi, featuring a dual anode common cathode configuration. It is housed in a D2PAK (TO-263) surface-mount package with three pins. The device supports a maximum continuous forward current of 30 A and a peak reverse repetitive voltage of 30 V. Key electrical characteristics include a maximum forward voltage drop of 670 mV and a peak non-repetitive forward surge current rating of 200 A. It operates within a junction temperature range from -65 °C to +175 °C.

Diode Arrays Feature Summary

  • Utilizes Schottky technology for low forward voltage drop and high efficiency switching.
  • Features a dual anode common cathode configuration suitable for full-wave rectification.
  • Designed for high thermal performance with a maximum operating junction temperature of 175 °C.

Diode Arrays Applications

  • High-frequency power supply rectification
  • Free-wheeling diodes in DC-DC converters
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the complete part number including the suffix T4G to ensure correct packaging and compliance status. Confirm that the D2PAK footprint matches the design layout. Check for RoHS and REACH compliance documentation specific to this manufacturing lot. Ensure storage conditions align with moisture sensitivity level requirements before assembly.

Diode Arrays Selection Notes

Select this component when a low forward voltage drop is critical for system efficiency at high currents. The dual anode common cathode arrangement allows for efficient full-wave rectification in a compact surface-mount form factor. Consider the 30 A current rating and 30 V voltage limit to ensure adequate headroom for the specific application's peak loads and transient voltages.

Diode Arrays Part Context

This device belongs to onsemi's MBRB series of Schottky barrier rectifiers. The series is characterized by silicon construction and is designed for general-purpose rectification in power electronics. The MBRB3030CTT4G variant specifically targets applications requiring robust current handling and fast switching speeds in a standardized TO-263 package.

Diode Arrays FAQ

What is the maximum junction temperature for the MBRB3030CTT4G?

The maximum operating junction temperature is +175 °C.

Does the MBRB3030CTT4G have a single or dual diode configuration?

It features a dual anode common cathode configuration.

What is the peak non-repetitive forward surge current rating?

The peak non-repetitive forward surge current is rated at 200 A.

MBRB3030CTT4GMBRB3030CTT4G
$1.59
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