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MBRB3045CT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 45V 15A TO263AB. Review the specifications below when checking this part for your BOM.
The MBRB3045CT-E3/45 is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes the D2PAK (TO-263AB) surface-mount package and features a maximum repetitive peak reverse voltage of 45 V with a total maximum average forward rectified current of 30 A, divided into 15 A per diode. The device exhibits a low forward voltage drop of 0.60 V at 20 A and 125 °C, alongside a high forward surge capability of 200 A per diode. Operating junction temperatures range from -65 °C to +150 °C.
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status and specific packaging options such as tube or tape and reel configurations. Ensure thermal management requirements align with the specified junction temperature limits during system integration.
Select this component for applications demanding high efficiency and low forward voltage drops in compact surface-mount designs. Evaluate thermal resistance characteristics against expected operating currents. Consider the 45 V reverse voltage rating relative to circuit peak reverse voltages to ensure adequate safety margins.
This part belongs to the MBRx30x5CT series of dual common cathode Schottky rectifiers. It shares architectural similarities with the MBR3045CT through-hole variant but offers surface-mount convenience via the D2PAK package. The E3 suffix indicates RoHS compliance and matte tin plating.
MBR3045CT-E3/4W
The maximum non-repetitive peak forward surge current is 200 A per diode under an 8.3 ms single half sine-wave condition superimposed on rated load.
Yes, the device is AEC-Q101 qualified, making it suitable for automotive applications requiring high reliability.
The typical thermal resistance from junction to case (R_TJC) is 1.5 °C/W per diode.
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