MBRB41H100CT-1H

Description：DIODE ARRAY SCHOT 100V 20A TO262
Series：SWITCHMODE™

SKU:1b7abc4dc079 Category: Diode Arrays Brand: onsemi

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Product introduction

MBRB41H100CT-1H is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY SCHOT 100V 20A TO262. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRB41H100CT-1H

Description：DIODE ARRAY SCHOT 100V 20A TO262
Series：SWITCHMODE™
Mfr：onsemi
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：100 V
Current - Average Rectified (Io) (per Diode)：20A
Voltage - Forward (Vf) (Max) @ If：800 mV @ 20 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：10 µA @ 100 V
Operating Temperature - Junction：175°C (Max)
Mounting Type：Through Hole
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package：TO-262 (I2PAK)
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBRB41H100CT-1H

MBRB41H100CT-1H

Diode Arrays Overview

The MBRB41H100CT-1H is a dual common cathode silicon Schottky rectifier from onsemi, packaged in I2PAK (TO-262). It features a 100 V repetitive peak reverse voltage and a total average forward current of 40 A, with 20 A per diode leg. The device operates at junction temperatures up to 175°C and includes guard-ring technology for stress protection. Electrical characteristics specify a maximum instantaneous forward voltage of 0.90 V at 25°C and 0.76 V at 125°C when conducting 40 A. Reverse leakage current is limited to 10 mA at 125°C under rated DC voltage.

Diode Arrays Feature Summary

Halide-free construction
Controlled avalanche capability
Guard-ring for stress protection

Diode Arrays Applications

Power supply output rectification
Power management systems
Instrumentation

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the Halide-Free designation matches project requirements. Check for any automotive-specific prefixes if unique site control or PPAP capabilities are required. Ensure thermal management aligns with the specified junction temperature limits.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage drop and high surge capacity. The I2PAK package suits surface-mount designs needing robust thermal performance. Consider the controlled avalanche rating for inductive load switching. Verify compatibility with operating temperatures up to 175°C.

Diode Arrays Part Context

This part belongs to the MBR41H100CT series, which includes variants like MBR41H100CTG and MBRB41H100CTT4G. The series offers similar electrical ratings across different packages such as TO-220 and D2PAK. The -1H suffix specifically denotes the I2PAK package with halide-free epoxy molding compound.

Diode Arrays Replacement Considerations

MBR41H100CTH

Diode Arrays FAQ

What does the 'H' suffix indicate in the MBRB41H100CT-1H part number?

The 'H' suffix indicates that the device is manufactured using halide-free materials.

Is the MBRB41H100CT-1H qualified for automotive applications?

No, the NRVBB prefix is used for automotive and other applications requiring unique site and control change requirements; the standard MBRB prefix does not imply this qualification.