Diode Arrays MBRB60H100CTT4G product image

MBRB60H100CTT4G

$2.35
  • Description:DIODE ARRAY SCHOT 100V 30A D2PAK
  • Series:SWITCHMODE™

SKU:3f3f1ece3993 Category: Brand:

  
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MBRB60H100CTT4G is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY SCHOT 100V 30A D2PAK. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRB60H100CTT4G

  • Description:DIODE ARRAY SCHOT 100V 30A D2PAK
  • Series:SWITCHMODE™
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):30A
  • Voltage - Forward (Vf) (Max) @ If:840 mV @ 30 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 100 V
  • Operating Temperature - Junction:175°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRB60H100CTT4G

MBRB60H100CTT4G

Diode Arrays Overview

The MBRB60H100CTT4G is a Switch-mode Power Rectifier featuring dual Schottky barrier diodes in a common cathode configuration. It provides a total average rectified forward current of 60 A (30 A per leg) and a peak repetitive reverse voltage of 100 V. The device operates with a junction temperature range from -55°C to +175°C and supports nonrepetitive peak surge currents up to 350 A. Packaged in a D2PAK-3 surface-mount case, it offers low forward voltage characteristics for high efficiency.

Diode Arrays Feature Summary

  • Low forward voltage drop for reduced power loss and high efficiency
  • High surge capacity supporting demanding transient loads
  • Controlled avalanche capability for robust operation
  • Extended operating junction temperature up to 175°C

Diode Arrays Applications

  • Power supply output rectification
  • Power management systems
  • Instrumentation circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix T4G confirms the D2PAK-3 tape and reel packaging format. Confirm compliance with RoHS standards and lead-free requirements. Check for any site-specific control changes associated with the NRVB prefix if automotive qualification is required. Validate that the component meets the necessary thermal resistance specifications for the intended heatsinking application.

Diode Arrays Selection Notes

Select this component when high current handling and low conduction losses are critical. Ensure the thermal design accommodates the junction-to-case thermal resistance. Verify that the 100 V reverse voltage rating exceeds the maximum circuit voltage spikes. Consider the D2PAK-3 package constraints for PCB layout and soldering profiles during integration.

Diode Arrays Part Context

This part belongs to the MBR60H100CT family of Switch-mode Power Rectifiers. It shares electrical characteristics with the TO-220 packaged MBR60H100CTG and the automotive-grade NRVBB60H100CTT4G. The primary distinction lies in the surface-mount D2DAK-3 package configuration suitable for automated assembly processes.

Diode Arrays Replacement Considerations

MBR60H100CTG

Diode Arrays FAQ

Is the MBRB60H100CTT4G recommended for new designs?

No, the datasheet explicitly states that this device is discontinued and not recommended for new designs.

What is the maximum nonrepetitive peak surge current?

The device supports a nonrepetitive peak surge current of 350 A under half-wave, single-phase, 60 Hz conditions at rated load.

Does the device support controlled avalanche operation?

Yes, the datasheet specifies a controlled avalanche energy rating of 400 mJ, demonstrating its capability to handle unclamped inductive switching events.

MBRB60H100CTT4GMBRB60H100CTT4G
$2.35
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