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MBRB60H100CTT4G is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY SCHOT 100V 30A D2PAK. Review the specifications below when checking this part for your BOM.
The MBRB60H100CTT4G is a Switch-mode Power Rectifier featuring dual Schottky barrier diodes in a common cathode configuration. It provides a total average rectified forward current of 60 A (30 A per leg) and a peak repetitive reverse voltage of 100 V. The device operates with a junction temperature range from -55°C to +175°C and supports nonrepetitive peak surge currents up to 350 A. Packaged in a D2PAK-3 surface-mount case, it offers low forward voltage characteristics for high efficiency.
Verify the specific ordering suffix T4G confirms the D2PAK-3 tape and reel packaging format. Confirm compliance with RoHS standards and lead-free requirements. Check for any site-specific control changes associated with the NRVB prefix if automotive qualification is required. Validate that the component meets the necessary thermal resistance specifications for the intended heatsinking application.
Select this component when high current handling and low conduction losses are critical. Ensure the thermal design accommodates the junction-to-case thermal resistance. Verify that the 100 V reverse voltage rating exceeds the maximum circuit voltage spikes. Consider the D2PAK-3 package constraints for PCB layout and soldering profiles during integration.
This part belongs to the MBR60H100CT family of Switch-mode Power Rectifiers. It shares electrical characteristics with the TO-220 packaged MBR60H100CTG and the automotive-grade NRVBB60H100CTT4G. The primary distinction lies in the surface-mount D2DAK-3 package configuration suitable for automated assembly processes.
MBR60H100CTG
No, the datasheet explicitly states that this device is discontinued and not recommended for new designs.
The device supports a nonrepetitive peak surge current of 350 A under half-wave, single-phase, 60 Hz conditions at rated load.
Yes, the datasheet specifies a controlled avalanche energy rating of 400 mJ, demonstrating its capability to handle unclamped inductive switching events.
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