MBRD660CT

Diode Arrays Overview

The MBRD660CT is a surface-mount Schottky rectifier featuring a center-tap configuration with two silicon elements in a D-PAK (TO-252AA) package. It provides a maximum DC reverse voltage of 60 V and an average forward current of 6 A per device (3 A per leg). The component supports high-frequency operation with a low forward voltage drop of 0.7 V at 3 A and 0.9 V at 6 A. It withstands a non-repetitive peak surge current of 490 A and operates within a junction temperature range of -40 to 150 °C.

Diode Arrays Feature Summary

• Center tap configuration for dual common cathode applications
• Low forward voltage drop for high efficiency
• Guard ring construction for enhanced ruggedness and reliability
• Small footprint suitable for surface mount PCB designs

Diode Arrays Applications

• Switching power supplies
• Free-wheeling diodes
• Battery charging circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix to confirm the packaging format, as options include tube, tape and reel, left-oriented tape, or right-oriented tape. Ensure the lead-free designation matches project requirements. Confirm that the thermal management design accommodates the specified junction-to-case and junction-to-ambient thermal resistance values under expected operating conditions.

Diode Arrays Selection Notes

Select this component when a dual Schottky rectifier with a center tap is required for space-constrained designs. The D-PAK outline offers a compact solution compared to through-hole alternatives. Consider the 60 V rating and 6 A total current capacity against circuit demands. Evaluate the thermal performance characteristics to ensure adequate heat dissipation for the intended duty cycle and ambient environment.

Diode Arrays Part Context

This device belongs to the MBRD650CT/MBRD660CT series of surface mount Schottky rectifiers originally developed by International Rectifier and now distributed by Vishay. The series utilizes Schottky barrier technology to minimize power loss. The MBRD660CT specifically denotes the 60 V variant within this family, sharing the same physical package and general electrical architecture as its 50 V counterpart.

Diode Arrays Replacement Considerations

The MBRD650CT serves as a direct functional substitute with identical pinout and package but a reduced 50 V reverse voltage rating. Verify that the lower voltage rating meets the circuit's peak reverse voltage requirements before substitution.

Diode Arrays FAQ

What is the maximum non-repetitive surge current rating?

The device can withstand a peak one-cycle non-repetitive surge current of 490 A for a 5 μs sine wave pulse.

How is the thermal resistance defined for this component?

The maximum thermal resistance from junction to case is 6 °C/W per leg, while the junction-to-ambient thermal resistance is 80 °C/W.

Does the component feature a guard ring?

Yes, the device incorporates a guard ring structure designed to provide enhanced ruggedness and long-term reliability.