Diode Arrays MBRF10H150CT1E3/45 product image

MBRF10H150CT1E3/45

  • Description:DIODE ARR SCHOT 150V 5A ITO220AC
  • Series:-

SKU:b4ca3f15cc37 Category: Brand:

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MBRF10H150CT1E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 150V 5A ITO220AC. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRF10H150CT1E3/45

  • Description:DIODE ARR SCHOT 150V 5A ITO220AC
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):5A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 µA @ 150 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package:ITO-220AC
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBRF10H150CT1E3/45

MBRF10H150CT1E3/45

Diode Arrays Overview

The MBRF10H150CT1E3/45 is a dual common-cathode high-voltage Schottky rectifier manufactured by Vishay General Semiconductor. It features a TO-220AB package with matte tin-plated leads and an epoxy body rated UL 94V-0. The device provides a maximum repetitive peak reverse voltage of 150 V and a total maximum average forward rectified current of 10 A, split as 5 A per diode. Peak forward surge current reaches 160 A per diode. Operating junction temperature ranges from -65 °C to +175 °C.

Diode Arrays Feature Summary

  • Guardring structure for overvoltage protection
  • Low forward voltage drop for high efficiency
  • Suitable for high frequency operation
  • Matte tin plated leads solderable per J-STD-002

Diode Arrays Applications

  • High frequency inverters
  • Freewheeling applications
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix configuration against the official datasheet to ensure correct packaging and compliance status. Confirm that the E3 suffix aligns with consumer grade requirements and whisker test standards. Check delivery mode specifications for tube quantities. Ensure mounting torque limits are respected during installation.

Diode Arrays Selection Notes

Select this component when low leakage current and high efficiency are required in high voltage environments. The dual common-cathode configuration simplifies circuit design for bridge or center-tapped applications. Consider thermal resistance values for heatsinking requirements. Verify operating temperature range compatibility with the target application environment.

Diode Arrays Part Context

This part belongs to the MBR10H150CT family of dual common-cathode Schottky rectifiers. It shares electrical characteristics with the MBR10H150CT and SB10H150CT-1 variants, differing primarily in package style. The MBRF designation specifically indicates the ITO-220AB case, while the base model typically refers to the TO-220AB package.

Diode Arrays Replacement Considerations

Direct substitutes include MBR10H150CT-E3/45 and SB10H150CT-1E3/45 within the same Vishay product line. Cross-manufacturer replacements must match the 150 V rating, 10 A total current capacity, and dual common-cathode configuration. Verify package dimensions and pinout compatibility before substitution.

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 160 A per diode for an 8.3 ms single half sine-wave superimposed on rated load.

Does the E3 suffix affect the electrical performance?

No, the E3 suffix denotes consumer grade compliance and meets JESD 201 class 1A whisker test requirements without altering the electrical parameters.

What is the typical thermal resistance for the MBRF variant?

The typical thermal resistance (RθJC) for the MBRF variant is 4.5 °C/W per diode at a case temperature of 25 °C.

MBRF10H150CT1E3/45MBRF10H150CT1E3/45

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