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MBRF20H150CT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTTKY 150V ITO220AB. Review the specifications below when checking this part for your BOM.
The MBRF20H150CT-E3/45 is a dual common-cathode high-voltage Schottky rectifier manufactured by Vishay General Semiconductor. It features an ITO-220AB package with an isolated flange for thermal management and electrical isolation. The device provides a maximum repetitive peak reverse voltage of 150 V and supports a total average forward rectified current of 20 A, distributed as 10 A per diode. Peak forward surge current capability reaches 200 A per diode under standard half-sine-wave conditions. The component operates within a junction temperature range of -65 °C to +175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package type and compliance status. Confirm that the required quantity aligns with the standard tube delivery mode specified in the datasheet. Ensure technical specifications meet the operational requirements before finalizing procurement decisions.
Select this component when high-frequency operation and low power loss are critical design parameters. The isolated flange makes it suitable for applications requiring electrical separation between the circuit ground and the mounting heatsink. Verify thermal resistance values against the specific cooling solution to ensure safe operating temperatures under load.
This part belongs to the Dual Common-Cathode High-Voltage Schottky Rectifier family. It shares core electrical characteristics with the MBR20H150CT and SB20H150CT-1 variants. The primary distinction lies in the physical package configuration, with the MBRF variant utilizing the ITO-220AB form factor designed for direct mounting to insulated heat sinks.
MBR20H150CT-E3/45
Yes, the ITO-220AB package includes an isolated flange that provides electrical isolation from the terminals to the heatsink.
The maximum non-repetitive peak forward surge current is 200 A per diode for an 8.3 ms single half sine-wave superimposed on rated load.
The maximum instantaneous forward voltage decreases as the junction temperature increases; for example, at 10 A, it drops from 0.90 V at 25 °C to 0.75 V at 125 °C.
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