Diode Arrays MBRF20H200CT-E3/45 product image

MBRF20H200CT-E3/45

  • Description:DIODE ARR SCHOTTKY 200V ITO220AB
  • Series:-

SKU:ef4c9e9229ac Category: Brand:

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MBRF20H200CT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTTKY 200V ITO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRF20H200CT-E3/45

  • Description:DIODE ARR SCHOTTKY 200V ITO220AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 µA @ 200 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package:ITO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRF20H200CT-E3/45

MBRF20H200CT-E3/45

Diode Arrays Overview

The MBRF20H200CT-E3/45 is a dual common-cathode high-voltage Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes an ITO-220AB plastic package with isolated heatsink mounting. The device features two silicon diode elements, each rated for a maximum average forward rectified current of 10 A and a total device rating of 20 A. It supports a maximum repetitive peak reverse voltage of 200 V and a peak forward surge current of 290 A. The component operates within a junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

  • Guarding for overvoltage protection
  • Low power loss and high efficiency
  • Low forward voltage drop
  • High frequency operation

Diode Arrays Applications

  • High frequency inverters
  • Freewheeling applications
  • Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance with RoHS 2002/95/EC and WEEE 2002/96/EC directives. Confirm that the E3 suffix indicates consumer grade qualification meeting JESD 201 class 1A whisker test requirements. Ensure the delivery mode matches the specified tube packaging format.

Diode Arrays Selection Notes

Select this component for circuits requiring low leakage current and high efficiency at high frequencies. The ITO-220AB package provides electrical isolation from the heatsink, suitable for applications where terminal-to-heatsink isolation is required. Verify thermal management capabilities against the typical thermal resistance per diode to ensure safe operation within the specified junction temperature limits.

Diode Arrays Part Context

This part belongs to the MBR20HxxCT series of dual common-cathode Schottky barrier rectifiers. The 'F' in the model number designates the ITO-220AB package variant, which differs from the standard TO-220AB (MBR) or TO-262AA (SB) packages. The series is characterized by metal-silicon junction technology and majority carrier conduction for fast switching performance.

Diode Arrays Replacement Considerations

Direct replacements include MBR20H200CT-E3/45 (TO-220AB package) and SB20H200CT-1E3/45 (TO-262AA package). These variants share identical electrical characteristics but differ in physical package dimensions and mounting configurations.

Diode Arrays FAQ

What is the isolation voltage specification for the ITO-220AB package?

The ITO-220AB package provides an isolation voltage of 1500 V AC from terminals to heatsink when tested for one minute.

Does the E3 suffix affect the electrical performance of the device?

No, the E3 suffix denotes compliance with RoHS directives and consumer grade qualification for whisker testing; it does not alter the electrical parameters.

What is the maximum non-repetitive peak forward surge current per diode?

The maximum non-repetitive peak forward surge current per diode is 290 A under an 8.3 ms single half sine-wave superimposed on rated load conditions.

MBRF20H200CT-E3/45MBRF20H200CT-E3/45

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