MBRF20H50CTHE3/45

Diode Arrays Overview

The MBRF20H50CTHE3/45 is a dual common-cathode Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes High Barrier Technology for improved high-temperature performance and features a guardring for overvoltage protection. The device is housed in an ITO-220AB package with matte tin-plated leads. Key electrical parameters include a maximum repetitive peak reverse voltage (VRRM) of 50 V, a total maximum average forward rectified current (IF(AV)) of 20 A (10 A per diode), and a non-repetitive avalanche energy rating of 80 mJ per diode at 25 °C.

Diode Arrays Feature Summary

• High Barrier Technology designed to enhance high-temperature operational stability
• Guardring structure incorporated to provide robust overvoltage protection
• Low forward voltage drop characteristics contributing to reduced power losses and higher efficiency
• Low leakage current specifications suitable for demanding switching applications

Diode Arrays Applications

• Low voltage, high frequency rectification in switching mode power supplies
• Freewheeling diode implementation in DC-to-DC converters
• Polarity protection circuits requiring low forward voltage drop

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm the exact package type and compliance grade. The HE3 suffix indicates a high reliability grade that is AEC Q101 qualified and meets JESD 201 class 2 whisker test requirements. Confirm thermal management capabilities align with the specified junction-to-case thermal resistance values provided in the datasheet before finalizing procurement.

Diode Arrays Selection Notes

Select this component when designing systems requiring a dual common-cathode configuration with a 50 V blocking capability. Ensure the application operates within the specified junction temperature range of -65 °C to +175 °C. Consider the thermal resistance of 4.0 °C/W from junction to case for heat dissipation planning. Validate that the 150 A peak forward surge current rating accommodates potential transient loads in the target circuit design.

Diode Arrays Part Context

This part belongs to the MBR(F,B)20HxxCT series, which encompasses variants ranging from 35 V to 60 V reverse voltage ratings. The series shares identical mechanical footprints across TO-220AB, ITO-220AB, and TO-263AB packages, allowing for pin-compatible design flexibility. The MBRF variant specifically denotes the ITO-220AB insulated tab package configuration.

Diode Arrays Replacement Considerations

MBR20H50CTHE3/45

Diode Arrays FAQ

What is the thermal resistance from junction to case for the MBRF20H50CTHE3/45?

The thermal resistance from junction to case (RθJC) for the MBRF series is 4.0 °C/W.

Does the HE3 suffix indicate automotive qualification?

Yes, the HE3 suffix denotes a high reliability grade that is AEC Q101 qualified.

What is the maximum non-repetitive avalanche energy rating?

The maximum non-repetitive avalanche energy per diode is rated at 80 mJ at 25 °C with an IAS of 4 A and L of 10 mH.