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MBRF20H90CT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 90V 10A ITO220AB. Review the specifications below when checking this part for your BOM.
The MBRF20H90CT-E3/45 is a dual common cathode high voltage Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes High Barrier Technology for improved high-temperature performance and features a guardring for overvoltage protection. The device is housed in an ITO-220AB package with electrical isolation from the heatsink. Key ratings include a maximum repetitive peak reverse voltage of 100 V, a total maximum average forward rectified current of 20 A (10 A per diode), and a peak forward surge current of 250 A. Operating junction temperature ranges from -65 °C to +175 °C.
Verify that the specific ordering suffix matches the required package type and compliance grade. Confirm the component meets RoHS standards and passes the JESD 201 class 1A whisker test requirements. Ensure the procurement documentation aligns with the manufacturer's specifications for the ITO-220AB configuration.
Select this component when electrical isolation between the circuit ground and the heatsink is mandatory. The ITO-220AB package is suitable for applications requiring high voltage blocking capabilities combined with significant current handling. Verify that the thermal management strategy accommodates the specified thermal resistance characteristics.
This part belongs to the MBR20HxxCT series of dual common cathode Schottky rectifiers. The 'F' in the model number indicates the ITO-220AB insulated package variant. This series is designed for high-efficiency power conversion applications where low forward voltage drop and high surge capability are critical performance factors.
MBR20H100CT-E3/45
The isolation voltage from terminal to heatsink is rated at 1500 V AC for a duration of one minute.
It improves high-temperature performance, allowing for stable operation within the extended junction temperature range up to 175 °C.
The device can withstand a peak forward surge current of 250 A for an 8.3 ms single half sine-wave superimposed on the rated load.
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