MBRF25H35CTHE3/45

Diode Arrays Overview

The MBRF25H35CTHE3/45 is a dual common cathode Schottky rectifier utilizing Vishay's High Barrier Technology. It features an ITO-220AB package with a maximum repetitive peak reverse voltage of 35 V and a total average forward rectified current of 30 A (15 A per diode). The device exhibits a low forward voltage drop, reaching a maximum of 0.64 V at 15 A and 25 °C, alongside a maximum reverse leakage current of 100 µA at rated voltage. It supports a peak forward surge current of 150 A and operates within a junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

• High Barrier Technology ensures improved high-temperature performance and lower power losses for higher efficiency.
• Guardring structure provides overvoltage protection capabilities.
• Low forward voltage drop combined with low leakage current optimizes switching mode power supply performance.
• AEC-Q101 qualified for automotive reliability standards.

Diode Arrays Applications

• Low voltage, high frequency rectification in switching mode power supplies
• Freewheeling diodes in DC/DC converters
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix HE3 confirms AEC-Q101 qualification status against the latest manufacturer documentation. Confirm the ITO-220AB package designation matches the required isolation or mounting specifications. Check for any product change notices regarding material categorization or whisker test compliance before finalizing procurement.

Diode Arrays Selection Notes

Select this component when designing for applications requiring high thermal stability and robust overvoltage protection. The ITO-220AB package offers distinct mounting characteristics compared to standard TO-220 variants. Ensure the circuit design accounts for the derating curves provided for case temperatures exceeding 25 °C to maintain safe operating limits.

Diode Arrays Part Context

This part belongs to the MBR25HxxCT family of dual common cathode Schottky rectifiers from Vishay General Semiconductor. The series utilizes High Barrier Technology to enhance performance metrics such as forward voltage and leakage current across various voltage ratings. The MBRF variant specifically denotes the insulated tab ITO-220AB package configuration.

Diode Arrays Replacement Considerations

Vishay MBR25H35CT-E3/45

Diode Arrays FAQ

What is the difference between the E3 and HE3 suffixes?

The HE3 suffix indicates that the component is AEC-Q101 qualified and meets JESD 201 class 2 whisker test requirements, whereas the E3 suffix denotes commercial grade compliance with JESD 201 class 1.

How does the ITO-220AB package differ electrically?

The ITO-220AB package provides electrical isolation between the terminal and the heatsink, offering an isolation voltage of 1500 VAC for one minute, which is not present in the standard TO-220AB version.

What is the maximum non-repetitive peak forward surge current?

The device can withstand a peak forward surge current of 150 A per diode for an 8.3 ms single half sine-wave superimposed on rated load.