Diode Arrays MBRF25H45CTHE3/45 product image

MBRF25H45CTHE3/45

  • Description:DIODE ARR SCHOT 45V 15A ITO220AB
  • Series:-

SKU:e8a238256138 Category: Brand:

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MBRF25H45CTHE3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 45V 15A ITO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRF25H45CTHE3/45

  • Description:DIODE ARR SCHOT 45V 15A ITO220AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:640 mV @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 45 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package:ITO-220AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBRF25H45CTHE3/45

MBRF25H45CTHE3/45

Diode Arrays Overview

The MBRF25H45CTHE3/45 is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes high barrier technology for improved high-temperature performance and features an ITO-220AB package. The device has a maximum repetitive peak reverse voltage of 45 V and a total average forward rectified current of 30 A (15 A per diode). Key electrical characteristics include a maximum instantaneous forward voltage of 0.64 V at 15 A and 25 °C, and a maximum reverse current of 100 µA at 25 °C. It supports a peak forward surge current of 150 A and operates within a junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

  • High barrier technology provides enhanced thermal stability and reliability under elevated operating conditions.
  • Guardring structure ensures robust overvoltage protection capabilities.
  • Low forward voltage drop contributes to reduced power losses and higher system efficiency.
  • AEC-Q101 qualified for automotive electronics applications.

Diode Arrays Applications

  • Low voltage, high frequency rectification in switching mode power supplies
  • Freewheeling diodes in DC/DC converter circuits
  • Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific suffix HE3 confirms AEC-Q101 qualification status. Confirm the ITO-220AB package designation matches the required mounting configuration. Check RoHS compliance documentation as indicated by the E3 suffix. Ensure the 45 V rating aligns with the circuit's peak reverse voltage requirements. Validate that the thermal resistance values are suitable for the intended heat dissipation environment.

Diode Arrays Selection Notes

Select this component when high-frequency operation and low forward voltage drop are critical for efficiency. The ITO-220AB package offers isolation from the heatsink, which is necessary if the cathode cannot be grounded directly. Consider the 175 °C maximum junction temperature for high-ambient environments. Verify that the 150 A surge current capability meets the transient load requirements of the application.

Diode Arrays Part Context

This part belongs to the MBR25HxxCT family of dual common cathode Schottky rectifiers. The 'F' in the model number designates the ITO-220AB insulated tab package variant. The 'HE3' suffix indicates AEC-Q101 qualification and whisker test compliance. The '45' specifies the 45 V reverse voltage rating within the series.

Diode Arrays Replacement Considerations

MBR25H45CT-E3/45

Diode Arrays FAQ

What is the difference between the MBRF25H45CTHE3/45 and the standard MBR25H45CT?

The MBRF25H45CTHE3/45 uses an ITO-220AB package which provides electrical isolation between the terminal and the heatsink, whereas the MBR25H45CT typically uses a TO-220AB package where the cathode is connected to the tab. Additionally, the HE3 suffix denotes AEC-Q101 qualification.

Is the MBRF25H45CTHE3/45 suitable for automotive applications?

Yes, the HE3 suffix indicates that the device is AEC-Q101 qualified, making it suitable for automotive electronics applications.

What is the maximum junction temperature for this component?

The maximum operating junction temperature for the MBRF25H45CTHE3/45 is +175 °C.

MBRF25H45CTHE3/45MBRF25H45CTHE3/45

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