MBRF30100CT-LJ

Diode Arrays Overview

The MBRF30100CT-LJ is a dual Schottky barrier rectifier in an ITO-220AB package. It features a common cathode configuration with two silicon elements. The device supports a peak repetitive reverse voltage of 100 V and an average rectified output current of 15 A per leg, totaling 30 A. The maximum forward voltage drop is 0.84 V at +25°C. It withstands a non-repetitive peak forward surge current of 190 A. Operating and storage temperatures range from -55°C to +175°C.

Diode Arrays Feature Summary

• Guard ring die construction provides transient protection capabilities.
• Qualified to AEC-Q101 standards for high reliability applications.
• Lead-free finish compliant with RoHS directives and free of halogen and antimony.

Diode Arrays Applications

• Polarity protection diodes
• Re-circulating diodes
• Switching diodes

Diode Arrays Procurement Notes

Verify the specific suffix 'LJ' against the manufacturer's official documentation to confirm compliance with lead-free, halogen-free, and antimony-free definitions. Confirm that the ITO-220AB package dimensions match the design requirements. Ensure the component meets the required AEC-Q101 qualification level if automotive or high-reliability standards are mandated for the project.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for commercial applications. The ITO-220AB package offers thermal performance suitable for moderate power dissipation. Consider the 175°C junction temperature rating for high-temperature environments. Verify that the 100V reverse voltage rating aligns with the circuit's peak inverse voltage requirements.

Diode Arrays Part Context

This part belongs to the MBR30100CT series manufactured by Diodes Incorporated. It shares electrical characteristics with the TO-220AB packaged version but utilizes the insulated ITO-220AB case. The series is designed for general commercial use, offering low forward voltage drop and high surge current capability typical of silicon Schottky barrier technology.

Diode Arrays Replacement Considerations

MBR30100CT-LJ

Diode Arrays FAQ

What is the thermal resistance from junction to case?

The typical thermal resistance from junction to case is 5 °C/W for the ITO-220AB package.

Is the device suitable for high-temperature operation?

Yes, the operating and storage temperature range extends up to +175°C.

What is the maximum leakage current at elevated temperatures?

The maximum leakage current is 10 mA at a reverse voltage of 100 V and a junction temperature of +125°C.