MBRF50035R

Diode Arrays Overview

The MBRF50035R is a silicon Schottky rectifier diode manufactured by GeneSiC Semiconductor. It features a peak repetitive reverse voltage of 35 V and a maximum average forward current of 250 A. The device utilizes a TO-244AB package with screw mount installation style. Operating temperature ranges from -55 °C to +150 °C junction temperature. The component is designed for high surge capability applications.

Diode Arrays Feature Summary

• High surge current capability
• Schottky barrier technology for low forward voltage drop
• Not ESD sensitive design

Diode Arrays Applications

• Power supply circuits
• Free-wheeling diodes in DC-DC converters
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix 'R' against official GeneSiC documentation, as it may indicate lead configuration or packaging variations. Confirm current availability status directly with authorized distributors, as lifecycle status may affect long-term sourcing. Ensure compliance with RoHS requirements if applicable to your assembly process.

Diode Arrays Selection Notes

Select this component when a 35 V blocking voltage and 250 A continuous current rating are required in a TO-244AB form factor. Consider the -55 °C to +150 °C operating range for thermal management. Verify that the screw mount interface matches your mechanical design constraints compared to through-hole alternatives.

Diode Arrays Part Context

This part belongs to the GeneSiC MBRF series of silicon power Schottky rectifiers. These devices are characterized by their robust construction and suitability for high-current power electronics. The series offers various voltage ratings from 45 V to 100 V, with the MBRF50035R providing a lower voltage option within the 250 A current class.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers for the MBRF50035R were not identified in the provided source material. Cross-referencing with other manufacturers requires careful verification of electrical parameters and mechanical dimensions.