Diode Arrays MBRF8100CT product image

MBRF8100CT

$0.34
  • Description:DIODE ARR SCHOT 100V 8A ITO220AB
  • Series:-

SKU:9d851c63e6f0 Category: Brand:

  
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MBRF8100CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOT 100V 8A ITO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRF8100CT

  • Description:DIODE ARR SCHOT 100V 8A ITO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):8A
  • Voltage - Forward (Vf) (Max) @ If:950 mV @ 4 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 100 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package:ITO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRF8100CT

MBRF8100CT

Diode Arrays Overview

The MBRF8100CT is an 8A Schottky Barrier Rectifier from the Taiwan Semiconductor MBRF835CT series, housed in an ITO-220AB package. It features a dual-die common cathode configuration with a repetitive peak reverse voltage of 100V and a maximum forward current of 8A. The device supports a surge peak forward current of 150A and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a typical forward voltage of 0.85V at 4A and a maximum reverse current of 100µA at rated voltage.

Diode Arrays Feature Summary

  • Guard ring structure provides overvoltage protection for enhanced reliability
  • Metal silicon junction design enables majority carrier conduction for low power loss
  • High surge current capability suitable for demanding transient conditions

Diode Arrays Applications

  • Switching mode power supplies (SMPS)
  • DC to DC converters
  • Adapters

Diode Arrays Procurement Notes

Verify the specific ordering code suffix to confirm AEC-Q101 automotive qualification status, as standard versions lack this certification. Ensure the ITO-220AB package dimensions align with the target PCB footprint and mounting torque requirements. Confirm RoHS compliance and halogen-free status against project specifications before finalizing procurement.

Diode Arrays Selection Notes

Select the MBRF8100CT when a 100V blocking voltage is required alongside an 8A continuous current rating. The dual-die common cathode architecture allows for efficient bridge rectification or polarity protection in compact designs. Consider the thermal resistance and derating curves for high ambient temperature environments to ensure safe operating area compliance.

Diode Arrays Part Context

This component belongs to the MBRF835CT series, which spans reverse voltages from 35V to 150V. All members share identical physical packages and thermal characteristics, differing primarily in breakdown voltage ratings. The series utilizes a standardized manufacturing process to ensure consistent performance across the voltage range while maintaining low forward voltage drops.

Diode Arrays Replacement Considerations

Direct substitutes within the same series include MBRF890CT (90V) and MBRF8150CT (150V), provided voltage margins are adjusted accordingly. Cross-manufacturer replacements must match the 8A current rating, 100V VRRM, and ITO-220AB package form factor to ensure mechanical and electrical compatibility.

Diode Arrays FAQ

What is the marking code on the MBRF8100CT device?

The marking code on the device body is MBRF8100CT.

Does the standard MBRF8100CT meet AEC-Q101 standards?

No, only the version with the 'H' suffix (MBRF8100CTH) is AEC-Q101 qualified.

What is the maximum junction-to-case thermal resistance?

The typical junction-to-case thermal resistance is 6 °C/W.

MBRF8100CTMBRF8100CT
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