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MBRS2050CT MNG is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOTT 50V 20A TO263AB. Review the specifications below when checking this part for your BOM.
The MBRS2050CT MNG is a dual common-cathode Schottky barrier surface mount rectifier manufactured by Taiwan Semiconductor Corporation. It utilizes TO-263AB (D2PAK) packaging and features a maximum repetitive peak reverse voltage of 50 V with a continuous forward current rating of 20 A. The device supports a junction temperature range from -55 °C to +150 °C and offers a typical forward voltage of 0.95 V at 20 A. It includes guard ring protection for overvoltage stress and meets JESD 201 class 2 whisker test requirements.
Verify the specific ordering code suffix against manufacturer documentation to confirm tape and reel packing specifications. Ensure the component matches the required voltage and current ratings for the target circuit application. Confirm RoHS compliance and halogen-free status as per IEC standards during procurement validation.
Select this component for applications requiring low forward voltage drop and high switching efficiency in compact surface mount designs. Consider the thermal resistance and junction temperature limits when designing heat dissipation strategies. Verify that the 50 V reverse voltage rating aligns with the peak inverse voltage requirements of the specific circuit topology.
This part belongs to the MBRS20xCT series, which encompasses various voltage ratings from 35 V to 150 V within the same 20 A current family. All devices share identical physical dimensions and pin configurations, facilitating design flexibility across different voltage requirements while maintaining consistent mechanical integration.
Compatible substitutes include other manufacturers' 20 A, 50 V Schottky rectifiers in the TO-263AB package. Verify equivalent forward voltage, reverse leakage current, and thermal performance characteristics before implementation.
The maximum operating junction temperature is +150 °C.
Yes, the device incorporates a guard ring structure designed to provide protection against overvoltage stress.
The typical forward voltage drop is 0.95 V when measured at a forward current of 20 A and a junction temperature of 25 °C.
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