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MBRS6040CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOTT 40V 60A TO263AB. Review the specifications below when checking this part for your BOM.
The MBRS6040CT is a dual Schottky barrier rectifier manufactured by Taiwan Semiconductor. It features a TO-263AB (D2PAK) surface-mount package with a common cathode configuration. The device supports a repetitive peak reverse voltage of 40 V and an average forward current of 60 A. Key electrical parameters include a maximum forward voltage of 1.05 V at 60 A, a surge current rating of 250 A, and a junction temperature range from -55°C to +150°C.
Verify the specific ordering code against the manufacturer's datasheet to ensure correct packaging and marking details. Confirm RoHS compliance and halogen-free status requirements prior to procurement. Ensure the component meets JESD 201 class 2 whisker test standards for your application environment.
Select this component for applications requiring low forward voltage drop and high thermal stability in a surface-mount form factor. Consider the 60 A current rating and 40 V blocking voltage when designing power stages. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation within the specified operating temperature range.
This part belongs to the MBRS series of Schottky barrier rectifiers designed for high-efficiency power conversion. It utilizes silicon technology and is housed in a TO-263AB package. The device is intended for general-purpose rectification in compact electronic designs where space and thermal performance are critical constraints.
Consult official substitution lists or cross-reference guides for verified equivalent parts. Ensure any replacement matches the 60 A current rating, 40 V voltage rating, and D2PAK package dimensions. Verify that alternative components meet the same electrical and mechanical specifications.
The maximum operating junction temperature is +150°C.
Yes, the device includes a guard ring structure for overvoltage protection.
The surge peak forward current is rated at 250 A for an 8.3 ms single half-sine wave superimposed on the rated load.
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