MBRT120150

Diode Arrays Overview

The MBRT120150 is a silicon power Schottky diode module from GeneSiC Semiconductor, rated for a repetitive peak reverse voltage of 150 V and an average forward current of 120 A per package. It features a three-tower isolation type package with an electrically isolated base plate. The device operates within a junction temperature range of -55 to 150 °C and exhibits a maximum instantaneous forward voltage of 0.88 V at Tj = 25 °C. Thermal resistance from junction to case is 0.80 °C/W per leg.

Diode Arrays Feature Summary

• High surge capability designed for robust transient handling
• Isolation type package with an electrically isolated base plate
• Not sensitive to electrostatic discharge (ESD)

Diode Arrays Applications

• DC-DC converters
• Free-wheeling rectification in motor drives
• Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific suffix designation when ordering, as the datasheet indicates that devices with the 'R' suffix have reversed leads compared to standard configurations. Confirm the exact voltage rating required, as the series spans from 150 V to 200 V. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation under load conditions.

Diode Arrays Selection Notes

Select this component for applications requiring high current density and low forward voltage drop. The isolated base plate facilitates direct mounting to heatsinks without additional insulators, simplifying mechanical design. Consider the thermal resistance and operating temperature limits when designing heat dissipation systems to ensure the junction temperature remains within the specified -55 to 150 °C range during continuous operation.

Diode Arrays Part Context

This module belongs to the MBRT120150 through MBRT120200R series of silicon power Schottky diodes. The series offers varying reverse voltage ratings while maintaining consistent current handling capabilities. The three-tower package structure provides a compact solution for high-power applications, distinguishing it from standard discrete diode packages by integrating multiple legs into a single isolated unit.

Diode Arrays Replacement Considerations

Direct substitutes must match the 150 V reverse voltage, 120 A current rating, and three-tower isolated package form factor. Verify lead configuration compatibility, particularly if replacing an 'R' variant which has reversed leads. Ensure equivalent thermal resistance and forward voltage characteristics to maintain system performance.