MBRT120200R

Diode Arrays Overview

The MBRT120200R is a silicon power Schottky diode module from the MBRT120 series, manufactured by GeneSiC Semiconductor. It features a three-tower package with an electrically isolated base plate and operates within a junction temperature range of -55°C to +150°C. The device provides a repetitive peak reverse voltage (VRRM) of 200 V and supports an average forward current (IF(AV)) of 120 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 0.92 V at Tj = 150°C and a peak forward surge current (IFSM) of 800 A for an 8.3 ms half-sine pulse. The thermal resistance from junction to case is 0.80 °C/W per leg.

Diode Arrays Feature Summary

• High surge capability designed for robust transient handling
• Isolation type package featuring an electrically isolated base plate
• Not ESD sensitive for simplified handling

Diode Arrays Applications

• Power conversion systems requiring high surge tolerance
• Rectifier applications utilizing isolated mounting configurations
• Industrial electronics operating across wide temperature ranges

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration details. Confirm that the component meets all required environmental and safety standards for your intended application before procurement. Ensure compatibility with existing thermal management solutions given the specified thermal resistance values.

Diode Arrays Selection Notes

Select this component when a 200 V blocking voltage and 120 A continuous current rating are required in an isolated package. Consider the 0.80 °C/W thermal resistance for heat sink design. Verify that the three-tower form factor fits the mechanical constraints of the target assembly.

Diode Arrays Part Context

This module belongs to the MBRT120 series, which includes variants ranging from 150 V to 200 V. All devices in this family share the same physical package dimensions and thermal characteristics, differing primarily in their voltage ratings. The 'R' designation indicates reversed leads compared to standard versions.

Diode Arrays Replacement Considerations

Direct replacements within the same series include the MBRT120150R for lower voltage requirements. Cross-brand equivalents must match the 120 A current rating, 200 V blocking voltage, and three-tower package dimensions.