Diode Arrays MBRT12035 product image

MBRT12035

$53.24
  • Description:DIODE MOD SCHOTT 35V 60A 3TOWER
  • Series:-

SKU:de0352663479 Category: Brand:

  
  • Quantity
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MBRT12035 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 35V 60A 3TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRT12035

  • Description:DIODE MOD SCHOTT 35V 60A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):35 V
  • Current - Average Rectified (Io) (per Diode):60A
  • Voltage - Forward (Vf) (Max) @ If:750 mV @ 60 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRT12035

MBRT12035

Diode Arrays Overview

The GeneSiC Semiconductor MBRT12035 is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 35 V and an average forward current of 120 A per package. It features a maximum instantaneous forward voltage of 0.70 V at 60 A and a thermal resistance from junction to case of 0.80 °C/W per leg. The device supports a peak forward surge current of 800 A and operates within a temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability with 800 A peak forward surge current rating
  • Electrically isolated base plate providing isolation type packaging
  • Not ESD sensitive design for robust handling

Diode Arrays Applications

  • Low voltage high frequency inverters
  • Free wheeling applications
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation, as variants such as the 'R' designation indicate reversed leads which alter terminal configuration without changing electrical function. Confirm RoHS compliance status through the manufacturer's latest release notes or datasheet revision history before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component when designing systems requiring low forward voltage drop and high efficiency in low voltage environments. Ensure the thermal management solution can maintain the junction temperature below 150 °C under continuous load conditions given the 0.80 °C/W thermal resistance. Verify that the 35 V reverse voltage rating provides adequate margin for the circuit's peak reverse voltage spikes.

Diode Arrays Part Context

This module belongs to the MBRT120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series encompasses ratings from 20 V to 40 V, offering consistent 120 A current capacity across variants. These modules utilize a three-tower package design optimized for screw mounting and high-power density applications.

Diode Arrays Replacement Considerations

Cross-reference with other MBRT120 series variants like MBRT12030 or MBRT12040 if voltage requirements differ. Ensure any substitute maintains the same three-tower package dimensions and terminal configuration for mechanical compatibility.

MBRT12035MBRT12035
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