Diode Arrays MBRT12035R product image

MBRT12035R

$53.24
  • Description:DIODE MOD SCHOTT 35V 60A 3TOWER
  • Series:-

SKU:4d191bdc1411 Category: Brand:

  
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MBRT12035R is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 35V 60A 3TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRT12035R

  • Description:DIODE MOD SCHOTT 35V 60A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):35 V
  • Current - Average Rectified (Io) (per Diode):60A
  • Voltage - Forward (Vf) (Max) @ If:750 mV @ 60 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRT12035R

MBRT12035R

Diode Arrays Overview

The MBRT12035R is a silicon power Schottky diode module from the MBRT120 series, manufactured by GeneSiC Semiconductor. It features a three-tower package with an electrically isolated base plate and reversed leads for the 'R' variant. Key electrical parameters include a repetitive peak reverse voltage (VRRM) of 35 V, an average forward current (IF(AV)) of 120 A per package, and a maximum instantaneous forward voltage (VF) of 0.70 V at Tj = 25 °C and IFM = 60 A. The device supports a junction temperature range of -55 °C to +150 °C, with a thermal resistance (RΘJC) of 0.80 °C/W per leg.

Diode Arrays Feature Summary

  • High surge capability with peak forward surge current of 800 A
  • Isolation type package with electrically isolated base plate
  • Not ESD sensitive design

Diode Arrays Applications

  • High frequency switching applications
  • Freewheeling diodes in power circuits
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix and lead time requirements directly with the manufacturer or authorized distributors, as availability may vary. Confirm that the reversed lead configuration associated with the 'R' designation matches the target PCB layout. Ensure compliance with RoHS directives and check for any export documentation requirements prior to procurement.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage drop and high surge current handling within a 35 V reverse voltage rating. The three-tower package facilitates efficient heat dissipation through the isolated base plate. Consider the 0.80 °C/W thermal resistance when designing the heatsinking solution to maintain junction temperatures within the specified operating range under rated load conditions.

Diode Arrays Part Context

This part belongs to the MBRT120 series of silicon power Schottky diodes, which offers types ranging from 20 V to 40 V VRRM. The series is characterized by its isolation type package and high surge capability. The MBRT12035R specifically provides a 35 V blocking voltage rating, fitting into the lower voltage segment of this product family designed for robust power rectification.

Diode Arrays Replacement Considerations

Compatible substitutes within the same series include MBRT12020R and MBRT12040R, provided their respective voltage ratings align with the circuit requirements. Verify that alternative components maintain similar thermal characteristics and package dimensions to ensure mechanical compatibility without redesigning the mounting structure.

MBRT12035RMBRT12035R
$53.24
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