MBRT12080R

$53.24

Description：DIODE MOD SCHOTT 80V 60A 3TOWER
Series：-

SKU:02f61c0d5956 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

MBRT12080R is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 80V 60A 3TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRT12080R

Description：DIODE MOD SCHOTT 80V 60A 3TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：80 V
Current - Average Rectified (Io) (per Diode)：60A
Voltage - Forward (Vf) (Max) @ If：880 mV @ 60 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：1 mA @ 20 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Three Tower
Supplier Device Package：Three Tower
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBRT12080R

MBRT12080R

Diode Arrays Overview

The MBRT12080R is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a three-tower package configuration with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 80 V and an average forward current of 120 A per package. Maximum instantaneous forward voltage is 0.80 V at Tj = 25 °C, while the maximum instantaneous reverse current is 1 mA at rated DC blocking voltage. The junction-to-case thermal resistance is 0.80 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

High surge capability designed for demanding transient conditions
Isolation type package construction with an electrically isolated base plate
Not ESD sensitive for simplified handling during assembly

Diode Arrays Applications

High-frequency switching power supplies
DC-DC converter circuits
Free-wheeling rectification in motor drives

Diode Arrays Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the reversed lead configuration associated with the R suffix matches the target PCB footprint design requirements. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values under expected operating loads.

Diode Arrays Selection Notes

Select this component when high surge current tolerance and low forward voltage drop are required in a thermally efficient module. The three-tower architecture allows for compact mounting on isolated heat sinks. Evaluate the 80 V rating against circuit peak inverse voltages to ensure adequate safety margins during normal operation and transient events.

Diode Arrays Part Context

This part belongs to the MBRT120 series of silicon power Schottky diodes. The series includes variants with different voltage ratings ranging from 45 V to 100 V. All members share the same physical package dimensions and thermal characteristics, differing primarily in their repetitive peak reverse voltage specifications.