Diode Arrays MBRT200150R product image

MBRT200150R

$70.04
  • Description:DIODE MOD SCHOT 150V 100A 3TOWER
  • Series:-

SKU:58397621aeb0 Category: Brand:

  
  • Quantity
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MBRT200150R is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 150V 100A 3TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRT200150R

  • Description:DIODE MOD SCHOT 150V 100A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):100A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 150 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRT200150R

MBRT200150R

Diode Arrays Overview

The GeneSiC Semiconductor MBRT200150R is a silicon power Schottky diode module featuring a Three Tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 150 V and an average forward current rating of 200 A per package. The device exhibits a maximum instantaneous forward voltage of 0.88 V at 200 A and a thermal resistance from junction to case of 0.45 °C/W per leg. Operating temperatures range from -55 °C to +150 °C, and the component is not ESD sensitive.

Diode Arrays Feature Summary

  • High surge capability for robust performance under transient conditions
  • Electrically isolated base plate within the Three Tower package design
  • Not ESD sensitive for simplified handling

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power factor correction circuits

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration details. The 'R' designation indicates reversed leads compared to standard variants. Confirm that the required voltage and current ratings align with the system's maximum operating limits before procurement. Ensure compatibility with the specified mounting torque and thermal interface materials for proper heat dissipation.

Diode Arrays Selection Notes

Select this component when high surge current capacity and low forward voltage drop are critical for efficiency. The isolated base plate allows for direct mounting to heatsinks without additional insulators. Consider the thermal resistance value for calculating junction temperature under continuous load conditions. Verify that the 150 V blocking voltage meets the circuit's peak reverse voltage requirements with adequate safety margin.

Diode Arrays Part Context

This module belongs to the MBRT200 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings, such as the MBRT200200R. These modules utilize a Three Tower package structure designed for high-current applications requiring reliable electrical isolation and efficient thermal management.

Diode Arrays Replacement Considerations

Cross-reference with other MBRT200 series parts like MBRT200200R if higher voltage ratings are needed. Verify pinout compatibility due to lead reversal differences between standard and 'R' suffix versions.

MBRT200150RMBRT200150R
$70.04
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