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MBRT200200R is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 200V 100A 3TOWER. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for MBRT200200R
- Description：DIODE MOD SCHOT 200V 100A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：920 mV @ 100 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1 mA @ 200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
Diode Arrays datasheet and documents for MBRT200200R
Diode Arrays Overview
The GeneSiC Semiconductor MBRT200200R is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 200 A per package. It utilizes a Three Tower package with an electrically isolated base plate. The maximum instantaneous forward voltage is 0.92 V at Tj = 150 °C, while the thermal resistance from junction to case is 0.45 °C/W per leg. Operating temperatures range from -55 °C to +150 °C.
Diode Arrays Feature Summary
- Features an electrically isolated base plate within a Three Tower package design
- Provides high surge capability for robust operation under transient conditions
- Constructed as a non-ESD sensitive component for simplified handling
Diode Arrays Applications
- High-frequency switching power supplies
- DC-DC converter circuits
- Free-wheeling rectification in motor drives
Diode Arrays Procurement Notes
Verify the specific part number suffix against official documentation to confirm terminal configuration details. Ensure that the procurement specifications align with the required voltage ratings and thermal management capabilities for the intended application environment.
Diode Arrays Selection Notes
Select this component based on its 200 A current rating and 200 V blocking voltage requirements. Consider the 0.45 °C/W thermal resistance when designing heat dissipation systems. Confirm compatibility with the Three Tower mounting style and verify electrical isolation needs are met by the package design.
Diode Arrays Part Context
This device belongs to the MBRT200 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants with different reverse voltage ratings, such as the 150 V version, sharing similar packaging and thermal characteristics.
Diode Arrays Replacement Considerations
Cross-reference with other modules in the MBRT200 series or equivalent Three Tower packages. Verify matching current, voltage, and thermal parameters before substitution.
Diode Arrays FAQ
What is the thermal resistance of the MBRT200200R?
The thermal resistance from junction to case is 0.45 °C/W per leg.
Is the MBRT200200R sensitive to electrostatic discharge?
No, the component is explicitly designed to be not ESD sensitive.
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