MBRT20035R

Diode Arrays Overview

The MBRT20035R is a silicon power Schottky diode module from the MBRT200 series, manufactured by GeneSiC Semiconductor. It features a Three Tower package with an electrically isolated base plate and operates within a junction temperature range of -55°C to +150°C. The device provides a repetitive peak reverse voltage (VRRM) of 35 V and supports an average forward current (IF(AV)) of 200 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 0.70 V at Tj = 25°C and a peak forward surge current (IFSM) of 1500 A per leg for an 8.3 ms half-sine pulse. The thermal resistance from junction to case is 0.45 °C/W per leg.

Diode Arrays Feature Summary

• High surge capability designed for demanding transient conditions
• Three Tower isolation type package with an electrically isolated base plate
• Not ESD sensitive for simplified handling

Diode Arrays Applications

• DC-DC converters
• Free-wheeling rectification in motor drives
• Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration details. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before procurement. Ensure that the sourcing channel provides valid traceability records for this discontinued component family.

Diode Arrays Selection Notes

Select the MBRT20035R when a 35 V blocking voltage and 200 A continuous current rating are required in a thermally efficient isolated package. Consider the 0.45 °C/W junction-to-case thermal resistance for heatsink design calculations. Verify that the operating environment remains within the specified -55°C to +150°C junction temperature limits.

Diode Arrays Part Context

This component belongs to the MBRT200 series of silicon power Schottky diodes produced by GeneSiC Semiconductor. The series includes variants ranging from 20 V to 40 V reverse voltage ratings. These modules utilize a Three Tower package architecture to provide high current density and reliable performance in industrial power applications.

Diode Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 35 V VRRM, 200 A IF(AV), and Three Tower package dimensions.