MBRT20060

$87.52

Description：DIODE MOD SCHOTT 60V 100A 3TOWER
Series：-

SKU:0384cef35f97 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

MBRT20060 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 60V 100A 3TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRT20060

Description：DIODE MOD SCHOTT 60V 100A 3TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：60 V
Current - Average Rectified (Io) (per Diode)：100A
Voltage - Forward (Vf) (Max) @ If：800 mV @ 100 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：1 mA @ 20 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Three Tower
Supplier Device Package：Three Tower
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBRT20060

MBRT20060

Diode Arrays Overview

The GeneSiC Semiconductor MBRT20060 is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 60 V and an average forward current of 200 A per package. It features a maximum instantaneous forward voltage of 0.75 V at Tj = 25 °C and a thermal resistance from junction to case of 0.45 °C/W per leg. The device supports a peak forward surge current of 1500 A per leg and operates within a temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

Electrically isolated base plate design
High surge current capability
Three Tower package configuration

Diode Arrays Applications

Power conversion systems
DC-DC converters
Inverter circuits

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation, as variants such as (R) indicate reversed lead configurations that affect terminal orientation. Confirm RoHS compliance status and ensure the sourcing channel provides valid manufacturer traceability. Cross-reference datasheet revision dates to guarantee accurate electrical parameters are applied during procurement.

Diode Arrays Selection Notes

Select this component based on its 60 V blocking voltage and 200 A continuous current rating. Evaluate the 0.45 °C/W thermal resistance for heat sink requirements in high-power applications. Ensure the operating temperature range meets system demands and consider the Three Tower package dimensions for mechanical integration.

Diode Arrays Part Context

This module belongs to the MBRT200 series of silicon power Schottky rectifiers. The series covers voltage ratings from 45 V to 100 V with consistent 200 A current handling. These modules utilize an electrically isolated base plate for mounting flexibility in power electronics assemblies.