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MBRT20080R is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 80V 100A 3TOWER. Review the specifications below when checking this part for your BOM.
The MBRT20080R is a silicon power Schottky diode module from the MBRT200 series, rated for a repetitive peak reverse voltage of 80 V and an average forward current of 200 A per package. It features a maximum instantaneous forward voltage of 1.0 V at 200 A and a thermal resistance of 0.45 °C/W per leg. The device operates within a junction temperature range of -55 °C to +150 °C and supports a peak forward surge current of 1500 A.
Verify the specific suffix designation against official documentation to confirm terminal configuration details. Ensure that the selected component matches the required voltage and current ratings for the intended application environment. Confirm compliance with relevant RoHS directives prior to procurement.
Select this module for applications requiring high average current handling and robust surge protection capabilities. The low forward voltage drop contributes to improved system efficiency. Consider the thermal resistance specifications when designing the heatsinking solution to maintain optimal junction temperatures during operation.
This component belongs to the MBRT200 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings ranging from 45 V to 100 V, all sharing a common Three Tower Package form factor designed for screw mounting and high reliability in industrial power electronics.
Direct replacements include other models within the MBRT200 series such as MBRT20045 or MBRT20060 if lower voltage ratings are acceptable. Verify pinout compatibility due to potential lead reversal differences indicated by the 'R' suffix in related part numbers.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.