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The GeneSiC Semiconductor MBRT40060R is a silicon power Schottky diode module featuring a Three Tower package. It provides a repetitive peak reverse voltage of 60 V and an average forward current rating of 400 A per package. The device exhibits a maximum instantaneous forward voltage of 0.75 V at rated conditions. Thermal resistance from junction to case is 0.35 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.
Verify the specific datasheet revision and terminal configuration before procurement, as the 'R' suffix indicates reversed leads compared to standard versions. Confirm thermal interface requirements match the 0.35 °C/W junction-to-case specification. Ensure the application environment stays within the -55 °C to +150 °C operating temperature range to maintain reliability.
Select this component when a 60 V blocking voltage and 400 A continuous current are required in a compact form factor. The low forward voltage drop aids efficiency. Verify that the system can accommodate the high surge current capacity if inrush events are expected. Ensure the mounting hardware supports the Three Tower package dimensions.
This part belongs to the MBRT400 series of silicon power Schottky diodes. The series covers voltages from 45 V to 100 V. All variants share the same Three Tower isolation package and similar thermal characteristics. The MBRT40060R specifically targets applications requiring moderate voltage blocking with high current throughput.
Cross-reference with other MBRT40060 or MBRT40060R part numbers from GeneSiC or Navitas. Verify pinout compatibility due to potential lead reversal differences between standard and 'R' suffix versions.
The 'R' suffix indicates that the device has reversed leads compared to the standard version.
No, the datasheet specifies that the device is not ESD sensitive.