MBRT40060R

MBRT40060R

$83.93
  • Description:DIODE MOD SCHOTT 60V 200A 3TOWER
  • Series:-

SKU:894cc2d9b3cd Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE MOD SCHOTT 60V 200A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:800 mV @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MBRT40060R

Overview

The GeneSiC Semiconductor MBRT40060R is a silicon power Schottky diode module featuring a Three Tower package. It provides a repetitive peak reverse voltage of 60 V and an average forward current rating of 400 A per package. The device exhibits a maximum instantaneous forward voltage of 0.75 V at rated conditions. Thermal resistance from junction to case is 0.35 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Feature Summary

  • High surge capability with a peak forward surge current of 3000 A per leg.
  • Electrically isolated base plate for secure mounting.
  • Not ESD sensitive during handling.

Applications

  • DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power supply output rectification

Procurement Notes

Verify the specific datasheet revision and terminal configuration before procurement, as the 'R' suffix indicates reversed leads compared to standard versions. Confirm thermal interface requirements match the 0.35 °C/W junction-to-case specification. Ensure the application environment stays within the -55 °C to +150 °C operating temperature range to maintain reliability.

Selection Notes

Select this component when a 60 V blocking voltage and 400 A continuous current are required in a compact form factor. The low forward voltage drop aids efficiency. Verify that the system can accommodate the high surge current capacity if inrush events are expected. Ensure the mounting hardware supports the Three Tower package dimensions.

Part Context

This part belongs to the MBRT400 series of silicon power Schottky diodes. The series covers voltages from 45 V to 100 V. All variants share the same Three Tower isolation package and similar thermal characteristics. The MBRT40060R specifically targets applications requiring moderate voltage blocking with high current throughput.

Replacement Considerations

Cross-reference with other MBRT40060 or MBRT40060R part numbers from GeneSiC or Navitas. Verify pinout compatibility due to potential lead reversal differences between standard and 'R' suffix versions.

FAQ

What does the 'R' suffix indicate in the MBRT40060R model?

The 'R' suffix indicates that the device has reversed leads compared to the standard version.

Is the MBRT40060R sensitive to electrostatic discharge?

No, the datasheet specifies that the device is not ESD sensitive.

MBRT40060RMBRT40060R
$83.93
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