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MBRT500200 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 200V 250A 3TOWER. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor MBRT500200 is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 500 A per package. It utilizes a Three Tower isolation type package with an electrically isolated base plate. The device operates within a junction temperature range of -55 °C to +150 °C, featuring a maximum instantaneous forward voltage of 0.92 V at Tj = 150 °C and a thermal resistance (junction-case) of 0.30 °C/W per leg.
Verify the specific part number suffix against official documentation to confirm terminal configuration details, as 'R' variants indicate reversed leads. Confirm availability status directly with the manufacturer or authorized distributors, as supply conditions may vary. Ensure compliance with export documentation requirements if applicable to your region before finalizing procurement.
Select this component for high-current applications requiring robust surge handling and electrical isolation. The low thermal resistance supports efficient heat dissipation in demanding environments. Verify that the 200 V blocking voltage aligns with system peak reverse voltage requirements. Consider the Three Tower package dimensions for mechanical integration and ensure adequate cooling solutions are available for the specified operating temperature range.
This module belongs to the MBRT500 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series includes variants ranging from 150 V to 200 V reverse voltage ratings. These modules are designed for high-performance rectification in industrial and power electronics applications, sharing common packaging and thermal characteristics across the family.
Public confirmed substitute part numbers are not available in the provided source material.
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