MBRT50040

Diode Arrays Overview

The MBRT50040 is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a three-tower package with an electrically isolated base plate and high surge capability. The device supports a repetitive peak reverse voltage (VRRM) of 40 V and an average forward current (IF(AV)) of 500 A per package. Maximum instantaneous forward voltage is 0.75 V, with a maximum thermal resistance from junction to case of 0.30 °C/W per leg. Operating and storage temperatures range from -55 °C to 150 °C.

Diode Arrays Feature Summary

• High surge capability for robust performance under transient conditions
• Three tower package design providing electrical isolation via the base plate
• Not ESD sensitive for simplified handling during assembly

Diode Arrays Applications

• Industrial power conversion systems
• DC-DC converter modules
• Uninterruptible power supply (UPS) units

Diode Arrays Procurement Notes

Verify the specific suffix designation against official documentation to confirm terminal configuration details. Confirm RoHS compliance status and check for any active product change notices or obsolescence warnings prior to finalizing procurement plans.

Diode Arrays Selection Notes

Select this component when a 40 V rating and 500 A continuous current capacity are required in an isolated module format. Ensure the application environment remains within the specified -55 °C to 150 °C operating temperature range for reliable operation.

Diode Arrays Part Context

This part belongs to the MBRT500 series of silicon power Schottky diodes. The series includes variants with different voltage ratings ranging from 20 V to 40 V, all sharing the same 500 A current rating and three-tower package structure for consistent mechanical integration.

Diode Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements may not match the specific three-tower isolation or thermal characteristics.