MBRT50045R

MBRT50045R

$63.77
  • Description:DIODE MOD SCHOTT 45V 250A 3TOWER
  • Series:-

SKU:05efb01b91f2 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE MOD SCHOTT 45V 250A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):250A
  • Voltage - Forward (Vf) (Max) @ If:750 mV @ 250 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MBRT50045R

Overview

The GeneSiC Semiconductor MBRT50045R is a silicon power Schottky diode module featuring a three-tower package with an electrically isolated base plate. It supports a repetitive peak reverse voltage of 45 V and delivers an average forward current of 500 A per package. The device operates within a junction temperature range of -55 °C to +150 °C, with a maximum thermal resistance from junction to case of 0.30 °C/W per leg. The 'R' suffix indicates reversed leads compared to standard configurations.

Feature Summary

  • High surge capability for robust transient handling
  • Isolation type package design with electrically isolated base plate
  • Not ESD sensitive for simplified handling

Applications

  • High current DC-DC conversion systems
  • Power factor correction circuits
  • Industrial motor drive rectification

Procurement Notes

Verify the specific lead configuration before procurement, as the 'R' suffix denotes reversed leads relative to standard variants in the series. Confirm that the application environment maintains the required thermal management capabilities to support the specified junction temperature limits during operation.

Selection Notes

Select this component when high average forward current capacity is required alongside low forward voltage characteristics typical of silicon Schottky technology. Ensure the system design accommodates the three-tower package dimensions and provides adequate mounting pressure for the isolated base plate interface.

Part Context

This part belongs to the MBRT500 series of silicon power Schottky diodes, which covers voltage ratings from 45 V to 100 V. The series utilizes a standardized three-tower package architecture designed for high-power density applications requiring electrical isolation between the terminal connections and the mounting surface.

Replacement Considerations

Direct replacements include other MBRT500 series variants such as MBRT50060R or MBRT50080R, provided the higher voltage ratings are acceptable. Verify that any substitute maintains the same three-tower package footprint and reversed lead configuration if physical compatibility is critical.

MBRT50045RMBRT50045R
$63.77
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