SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The GeneSiC Semiconductor MBRT50045R is a silicon power Schottky diode module featuring a three-tower package with an electrically isolated base plate. It supports a repetitive peak reverse voltage of 45 V and delivers an average forward current of 500 A per package. The device operates within a junction temperature range of -55 °C to +150 °C, with a maximum thermal resistance from junction to case of 0.30 °C/W per leg. The 'R' suffix indicates reversed leads compared to standard configurations.
Verify the specific lead configuration before procurement, as the 'R' suffix denotes reversed leads relative to standard variants in the series. Confirm that the application environment maintains the required thermal management capabilities to support the specified junction temperature limits during operation.
Select this component when high average forward current capacity is required alongside low forward voltage characteristics typical of silicon Schottky technology. Ensure the system design accommodates the three-tower package dimensions and provides adequate mounting pressure for the isolated base plate interface.
This part belongs to the MBRT500 series of silicon power Schottky diodes, which covers voltage ratings from 45 V to 100 V. The series utilizes a standardized three-tower package architecture designed for high-power density applications requiring electrical isolation between the terminal connections and the mounting surface.
Direct replacements include other MBRT500 series variants such as MBRT50060R or MBRT50080R, provided the higher voltage ratings are acceptable. Verify that any substitute maintains the same three-tower package footprint and reversed lead configuration if physical compatibility is critical.