Diode Arrays MBRT50060 product image

MBRT50060

$63.77
  • Description:DIODE MOD SCHOTT 60V 250A 3TOWER
  • Series:-

SKU:9beccb02bac7 Category: Brand:

  
  • Quantity
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MBRT50060 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 60V 250A 3TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRT50060

  • Description:DIODE MOD SCHOTT 60V 250A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):250A
  • Voltage - Forward (Vf) (Max) @ If:800 mV @ 250 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRT50060

MBRT50060

Diode Arrays Overview

The MBRT50060 is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a Three Tower package with an electrically isolated base plate and screw mount installation style. The device supports a repetitive peak reverse voltage of 60 V, an RMS reverse voltage of 42 V, and a DC blocking voltage of 60 V. It provides an average forward current of 500 A per package. The maximum instantaneous forward voltage is 0.78 V at Tj = 25 °C. The junction-to-case thermal resistance is 0.30 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability for robust transient handling
  • Electrically isolated base plate for safety
  • Three Tower package design for efficient mounting

Diode Arrays Applications

  • Industrial power conversion systems
  • DC-DC converter circuits
  • Inverter bridge rectification

Diode Arrays Procurement Notes

Verify the specific suffix designation (R or non-R) against the datasheet terminal configuration requirements before procurement. Confirm that the 60 V rating aligns with the system's peak reverse voltage demands. Ensure the thermal management solution accommodates the 0.30 °C/W junction-to-case resistance. Check for availability status as manufacturing transitions may affect supply continuity.

Diode Arrays Selection Notes

Select this component when a 500 A continuous current capacity and 60 V blocking voltage are required in a high-power density application. The Three Tower package facilitates direct heatsink mounting via screws. Consider the 0.78 V forward voltage drop for efficiency calculations at rated current. Verify compatibility with the intended switching frequency and thermal environment constraints.

Diode Arrays Part Context

This module belongs to the MBRT500 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series includes variants with reverse voltages ranging from 45 V to 100 V. All models share the same 500 A current rating and Three Tower package form factor. The 'R' suffix indicates reversed leads compared to standard versions.

Diode Arrays Replacement Considerations

Direct replacements within the same family include MBRT50045(R) and MBRT50080(R). These parts share identical current ratings and package dimensions but differ in reverse voltage specifications. Ensure the substitute voltage rating meets or exceeds the circuit requirements.

MBRT50060MBRT50060
$63.77
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