MBRT50080R

Overview

The GeneSiC Semiconductor MBRT50080R is a silicon power Schottky diode module featuring a three-tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 80 V and supports an average forward current of 500 A per package. The maximum instantaneous forward voltage is 0.84 V, while the maximum thermal resistance from junction to case is 0.30 °C/W per leg. The device operates within a temperature range of -55 °C to +150 °C.

Feature Summary

• High surge capability for robust transient handling
• Isolation type package design with electrically isolated base plate
• Not ESD sensitive for simplified handling

Applications

• High-current DC-DC conversion circuits
• Power factor correction stages
• Industrial motor drive freewheeling paths

Procurement Notes

Verify the specific suffix 'R' indicates reversed leads configuration as documented in the datasheet. Confirm that the component is sourced directly from authorized channels to ensure authenticity. Check for RoHS compliance status through official manufacturer documentation before finalizing procurement orders.

Selection Notes

Select this module when high average current capacity and low forward voltage drop are required. The three-tower isolation allows for efficient heat dissipation and flexible mounting options. Ensure the system operating temperature remains within the specified -55 °C to +150 °C range for reliable performance.

Part Context

This component belongs to the MBRT500 series of silicon power Schottky diodes. The series includes variants with different reverse voltage ratings ranging from 45 V to 100 V. All models share the same physical package dimensions and thermal characteristics, differing primarily in their blocking voltage specifications.

Replacement Considerations

Compatible substitutes include MBRT50060R and MBRT500100R from the same series. Verify lead orientation differences if replacing non-R variants with R-suffixed parts.