Diode Arrays MBRT600100 product image

MBRT600100

$99.37
  • Description:DIODE MOD SCHOT 100V 300A 3TOWER
  • Series:-

SKU:c133f286e57d Category: Brand:

  
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MBRT600100 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 100V 300A 3TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRT600100

  • Description:DIODE MOD SCHOT 100V 300A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRT600100

MBRT600100

Diode Arrays Overview

The MBRT600100 is a silicon power Schottky diode module from the MBRT600 series, manufactured by GeneSiC Semiconductor. It features a three-tower package with an electrically isolated base plate and screw mount installation. The device supports a repetitive peak reverse voltage (VRRM) of 100 V and an average forward current (IF(AV)) of 600 A per package. Maximum instantaneous forward voltage is 0.84 V at 300 A, while maximum thermal resistance (junction-to-case) is 0.28 °C/W per leg. Operating temperature ranges from -55°C to +150°C.

Diode Arrays Feature Summary

  • High surge capability with peak forward surge current of 4000 A
  • Electrically isolated base plate for safety and mounting flexibility
  • Three tower package design for efficient heat dissipation
  • Not ESD sensitive for simplified handling

Diode Arrays Applications

  • High current DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power supply output rectification
  • Industrial power conversion systems

Diode Arrays Procurement Notes

Verify exact part number suffixes against official datasheets, as variations may exist. Confirm manufacturer specifications directly with GeneSiC Semiconductor or authorized distributors. Check for end-of-life status or discontinuation notices before procurement planning. Ensure thermal management solutions match the specified junction-to-case thermal resistance requirements.

Diode Arrays Selection Notes

Select this module when high average current capacity and low forward voltage drop are critical. The isolated base plate allows direct mounting to heatsinks without additional insulators. Verify that the system's peak reverse voltage does not exceed 100 V. Consider the three-tower package dimensions for PCB layout and mechanical integration constraints.

Diode Arrays Part Context

Part of the MBRT600 series of silicon power Schottky diodes. Available in multiple voltage ratings from 45 V to 100 V. Shares common package style and thermal characteristics across the series. Designed for high-efficiency power conversion applications requiring robust surge handling capabilities.

Diode Arrays Replacement Considerations

Cross-reference with other MBRT600 series variants for different voltage ratings. Verify pinout compatibility if substituting within the same package family. Confirm thermal performance matches original design requirements.

Diode Arrays FAQ

What is the maximum thermal resistance from junction to case?

The maximum thermal resistance (RθJC) is 0.28 °C/W per leg.

Is the base plate electrically isolated?

Yes, the module features an electrically isolated base plate.

What is the peak forward surge current rating?

The peak forward surge current (IFSM) is 4000 A for an 8.3 ms half-sine wave pulse.

MBRT600100MBRT600100
$99.37
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