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The GeneSiC Semiconductor MBRT60020 is a silicon power Schottky diode module featuring a Three Tower package. It provides an average forward current of 600 A per package and supports repetitive peak reverse voltages ranging from 20 V to 40 V across the series. The device includes an electrically isolated base plate and exhibits high surge capability with a peak forward surge current of 4000 A per leg. Maximum thermal resistance from junction to case is 0.28 °C/W per leg, and it operates within a temperature range of -55 °C to +150 °C.
Verify the specific voltage rating required, as the MBRT60020 designation corresponds to the 20 V variant within the broader MBRT600xxR series. Confirm terminal configuration details against the datasheet, noting that devices marked with an 'R' suffix feature reversed leads compared to standard versions. Ensure compatibility with screw-mounting hardware specifications provided in the package dimensions section.
Select this component when applications demand high average forward current handling alongside low forward voltage drop characteristics. The isolated base plate facilitates direct heatsink attachment without additional insulators. Consider the maximum thermal resistance value for thermal management calculations to ensure junction temperatures remain within the specified operating limits under continuous load conditions.
This module belongs to the MBRT600 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series encompasses various voltage ratings from 20 V to 40 V, sharing common mechanical and thermal characteristics. These modules are designed for high-efficiency power conversion applications requiring reliable performance in harsh environments.
Direct substitutes include other models within the MBRT600 series such as MBRT60030 or MBRT60040, provided the voltage rating meets circuit requirements. Verify lead orientation differences if replacing an 'R' variant with a standard version.