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The GeneSiC Semiconductor MBRT600200 is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 600 A per package. It features a maximum instantaneous forward voltage of 0.92 V at 300 A and a thermal resistance from junction to case of 0.28 °C/W per leg. The device supports a peak forward surge current of 4000 A and operates within a temperature range of -55 °C to +150 °C.
Verify the specific suffix designation, as 'R' variants feature reversed leads compared to standard configurations. Confirm that the 200 V rating aligns with system requirements, noting this model sits within the 150 V to 200 V product family. Ensure mounting hardware matches the screw mount style typical of the Three Tower package design.
Select this component when a 200 V blocking voltage is required alongside a 600 A continuous current capacity. The low thermal resistance of 0.28 °C/W facilitates efficient heat dissipation in high-power environments. Consider the electrical isolation of the base plate if ground reference separation is necessary for the circuit topology.
This module belongs to the MBRT600 series, which includes variants ranging from 150 V to 200 V reverse voltage. The series utilizes a standardized Three Tower package structure designed for robust mechanical stability and thermal performance in industrial semiconductor applications.
MBRT600150(R) shares identical physical dimensions and thermal characteristics but offers a lower 150 V reverse voltage rating. Verify that the reduced voltage withstand capability meets the specific application's peak reverse voltage demands before substitution.
The 'R' suffix indicates that the terminal leads are reversed compared to the standard configuration.
No, the datasheet specifies that the device is not ESD sensitive.