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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 20V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：20 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：580 mV @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：3 mA @ 20 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRT60020L is a Schottky diode module manufactured by GeneSiC Semiconductor, part of the MBRT600 series. It features a Three Tower package with screw mount installation style. The component has a maximum reverse voltage (Vr) of 20 V and an average forward current (If) of 300 A per diode. The forward voltage (Vf) is specified at 750 mV under rated conditions. Operating temperature range spans from -55°C to +150°C junction temperature. The device utilizes Silicon technology and is classified as a discrete power module.
Feature Summary
- High current capacity with 300A rating in a compact Three Tower form factor
- Low forward voltage drop for improved efficiency in power conversion
- Wide operating temperature range suitable for demanding thermal environments
Applications
- High-power DC-DC converters
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify availability status carefully as this component may be discontinued or end-of-life. Confirm exact package dimensions and mounting hole specifications against your PCB or chassis design requirements. Ensure thermal management solutions align with the 150°C junction limit. Check for RoHS compliance documentation if required for your specific manufacturing standards.
Selection Notes
Select this module when high current handling and low conduction losses are critical. Compare Vf characteristics against alternative Schottky modules for efficiency optimization. Consider the Three Tower package constraints for board layout and heat sinking. Validate that the 20V reverse voltage rating provides sufficient margin for your circuit's peak inverse voltage scenarios.
Part Context
The MBRT60020L belongs to the MBRT600 series of high-power Schottky diode modules. This series is designed for applications requiring robust performance in silicon-based power electronics. GeneSiC Semiconductor specializes in both SiC and high-power silicon technologies, positioning this product within their discrete and power modules portfolio.
Replacement Considerations
Consult official discontinuation notices for recommended substitute part numbers. Verify electrical parameters such as Vr, If, and Vf match or exceed original requirements. Ensure mechanical compatibility with existing mounting structures before switching to alternative modules.
