Diode Arrays MBRT60030RL product image

MBRT60030RL

$57.80
  • Description:DIODE MOD SCHOTT 30V 300A 3TOWER
  • Series:-

SKU:e369fbd33372 Category: Brand:

  
  • Quantity
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MBRT60030RL is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 30V 300A 3TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRT60030RL

  • Description:DIODE MOD SCHOTT 30V 300A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:580 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 30 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRT60030RL

MBRT60030RL

Diode Arrays Overview

The MBRT60030RL is a silicon power Schottky rectifier manufactured by GeneSiC Semiconductor. It features a Twin Tower package configuration with a common anode arrangement for two elements. The device supports a maximum repetitive peak reverse voltage of 30V and an average forward current of 300A per diode. Key electrical parameters include a maximum forward voltage of 750mV at 300A and a maximum non-repetitive peak forward surge current of 4000A. The component operates within a temperature range of -55°C to 150°C junction temperature.

Diode Arrays Feature Summary

  • High surge current capability for robust transient handling
  • Low forward voltage drop for improved efficiency
  • Common anode dual element configuration
  • Twin Tower package design for base mounting

Diode Arrays Applications

  • Power supply circuits
  • DC-DC converters
  • Free-wheeling rectification in high-current applications

Diode Arrays Procurement Notes

Verify the specific suffix 'RL' against official GeneSiC documentation to confirm lead orientation or variant specifics, as ordering suffixes may alter physical pinout without changing electrical function. Ensure compatibility with Twin Tower mounting hardware. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents prior to finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when a low-voltage, high-current Schottky solution is required. The 30V rating suits synchronous rectification or low-drop applications. The 300A continuous current capacity requires adequate thermal management via the base plate. Consider the common anode topology for bridge-less or half-bridge configurations where shared cathodes are needed.

Diode Arrays Part Context

This part belongs to the MBR600 series of silicon power Schottky rectifiers from GeneSiC Semiconductor. The series utilizes a Twin Tower package optimized for high-power density applications. The MBRT60030RL specifically denotes the 30V variant within this family, sharing mechanical dimensions with other voltage ratings like the MBRT600100R while differing in breakdown voltage characteristics.

Diode Arrays Replacement Considerations

  • MBRT60030CTR
  • MBRT600150R

Diode Arrays FAQ

What is the package type for the MBRT60030RL?

The MBRT60030RL uses a Twin Tower package designed for base mounting.

Is the MBRT60030RL ESD sensitive?

According to the MBR400xxCTR series documentation which shares similar construction, these devices are not ESD sensitive.

MBRT60030RLMBRT60030RL
$57.80
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